P4402FAG

P4402FAG UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Duty cycle  1%. UNITS -20 -3.3 ± 12 V A -20 LIMITS ID IDM TYPICAL 0.7 1.1 -55 to 150 VGS -4.2 W RqJA 62.5 110 SYMBOL VDS Pulsed Drain Current1 RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 44mΩ @VGS = -4.5V -5A ID -20V TA = 25 ° C TA = 70 ° C Power Dissipation Continuous Drain Current TA = 25 ° C MAXIMUMTHERMAL RESISTANCE Operating Junction & Storage Temperature Range SYMBOL PD TJ, TSTG RqJA RqJLSteady State 50 ° C / W Junction-to-Ambient t≦5sec Junction-to-Ambient Steady State Junction-to-Lead Ver 1.0 1 2012/4/12

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -20 -0.45 -0.80 -1.20 ± 100 nA -10 -20 A 75 100 55 70 37 44 14 S 1100 170 140 12.5 2.1 3.5 -3 A -1 V 20 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. DYNAMIC V IGSS IDSS VDS = 0V, VGS = ± 12V RDS(ON) Drain-Source On-State Resistance1 VGS = -4.5V, ID = -5A mΩ Gate Threshold Voltage VGS = 0V, VDS = -10V, f = 1MHz pF Ciss Coss mA Drain-Source Breakdown Voltage VGS = -1.8V, ID = -2A VDS = -16V, VGS = 0V , TJ = 125 ° C VDS = VGS, ID = -250mAVGS(th) Forward Transconductance1 VGS = 0V, ID = -250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage VDS = -16V, VGS = 0V On-State Drain Current1 ID(ON) gfs VDS = -5V, ID = -5A STATIC LIMITS UNITPARAMETER SYMBOL TEST CONDITIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance Crss VDS = -5V, VGS = -10V VGS = -2.5V, ID = -4A Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Total Gate Charge2 Gate-Source Charge2 VDS = 0.5V(BR)DSS, VGS = -4.5V, ID = -5A nC nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 ° C ) Fall Time2 Qg Qgs Qgd td(on) tr td(off) IF = -1A, VGS = 0V Continuous Current Forward Voltage1 IS VSD VDS = -10V ID @ -1A, VGS = -4.5V, RGEN = 3Ω tf Gate-Drain Charge2 Reverse Recovery Charge Qrr Ver 1.0 2 2012/4/12

P-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/4/12

P-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/4/12

P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/12