P3710BV UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C SOP-8 IAS MAXIMUM Junction-to-Ambient 53 SYMBOL ± 20 IDM EAS THERMAL RESISTANCE Avalanche Energy TYPICAL SYMBOL 5.2 LIMITS A VGS VDS ID W UNITS 4.2 128 mJ 1.5 100Drain-Source Voltage TA= 25 ° C ID TA = 25 ° C 100V Continuous Drain Current TA = 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 37mΩ @VGS = 10V 5.2A Gate-Source Voltage TA =70 ° C Junction & Storage Temperature Range -55 to 150 Power Dissipation Tj, Tstg RqJA 2.3 V L = 1mH Pulsed Drain Current1 Avalanche Current PD REV 1.0 1 2014/9/16

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1 2 3 ± 100 nA 33 48 26 37 30 S 990 120 1 Ω 4.3 8.9 5.2 A 1.2 V 31 nS 32 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance VDS = 0V, VGS = ± 20V IDSS Coss Crss VDS = 80V, VGS = 0V VGS = 0V, VDS = 15V, f = 1MHz Rg pF nCQgs STATIC Drain-Source Breakdown Voltage V DYNAMIC VSD IF = 5A, VGS = 0V nSVDS = 50V,ID @ 5A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr Continuous Current Forward Voltage1 IS td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS VGS = 10V, ID = 5A Drain-Source On-State Resistance1 RDS(ON) LIMITS Qgd Output Capacitance Qg Forward Transconductance1 Ciss VDS = 5V, ID = 5A Input Capacitance gfs mΩ VGS = 4.5V, ID = 5A SYMBOL UNITS Zero Gate Voltage Drain Current VGS = 0V, ID = 250mA mAVDS = 80V, VGS = 0V, TJ = 55 ° C PARAMETER Gate-Body Leakage VGS(th) IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA Reverse Recovery Time Reverse Recovery Charge trr Qrr IF = 5A, dlF/dt = 100A /mS Total Gate Charge2 Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz VDS = 50V, VGS = 10V, ID =5A REV 1.0 2 2014/9/16

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/9/16

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/9/16

N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/9/16