P3710BTF UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Starting Tj =25 ° C,L=1mH,VDD=50V Avalanche Energy2 -55 to 150 MAXIMUM ° C / WJunction-to-Case PD UNITS ID IDM VGS SYMBOL ± 20 LIMITS A mJ 100 V 15.3IAS 12.5 117 W SYMBOLTHERMAL RESISTANCE TYPICAL Power Dissipation RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 37mΩ @VGS = 10V 19A ID 100V RqJC RqJA 62.5 TC = 25 ° C Tj, Tstg EAS Drain-Source Voltage VDS Continuous Drain Current Junction & Storage Temperature Range Pulsed Drain Current1 Avalanche Current TC = 25 ° C TC = 100 ° C Junction-to-Ambient REV 1.0 1 2017/1/19

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1 1.8 3 ± 100 nA 30 48 27 37 35 S 1070 146 3.7 8.8 19 A 1.2 V 39 nS 55 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Total Gate Charge2 pF IGSS IDSS IF = 10A , dIF/dt= 100A/ms Gate Threshold Voltage Drain-Source Breakdown Voltage VGS(th) Drain-Source On-State Resistance1 VDS = 80V, VGS = 0V RDS(ON) VDS = 0V, VGS = ± 20V Ciss VVDS = VGS, ID = 250mA VDS = 80V, VGS = 0V , TJ = 125 ° C V(BR)DSS mΩ VGS = 0V, ID = 250mA SYMBOL Zero Gate Voltage Drain Current Gate-Body Leakage Qgs gfs DYNAMIC VGS = 4.5V, ID = 10A mA VDS = 50V,VGS = 10V, ID = 10A nC Coss Crss Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance VGS = 10V, ID = 10A VDS = 10V, ID = 10A Qgd Input Capacitance Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz Forward Transconductance1 QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr Rise Time2 IF = 10A, VGS = 0V nSVDD = 50V, ID @ 10A, VGS = 10V, RGS = 6Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 Turn-Off Delay Time2 Fall Time2 LIMITS UNITSPARAMETER Qg TEST CONDITIONS STATIC REV 1.0 2 2017/1/19

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/19

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/19

N-Channel Enhancement Mode MOSFET *因各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/1/19

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) REV 1.0 6 2017/1/19

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/19

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/19