P3710BT UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2Starting Tj = 25 ° C,L= 1mH,VDD= 50V TC = 100 ° C Junction & Storage Temperature Range SYMBOL Power Dissipation THERMAL RESISTANCE PD TC = 25 ° C RqJC 1.6 TYPICAL TJ, TSTG 31A ID TC = 25 ° C 100V Continuous Drain Current EAS Drain-Source Voltage VDS Avalanche Energy2 RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 37mΩ @VGS = 10V -55 to 150 °C MAXIMUM Junction-to-Case LIMITS A mJ 128 W 100 V UNITS ID IDM SYMBOL ± 20VGS Pulsed Drain Current1 Avalanche Current IAS REV 1.0 1 2017/1/16

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1 1.8 3 ± 100 nA 35 48 27 37 30 S 970 129 4.3 8.3 31 A 1.2 V 36 nS 52 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. IGSS RDS(ON) VGS = 4.5V, ID = 10A mΩ UNITSTEST CONDITIONS LIMITS Rise Time2 Turn-Off Delay Time2 Fall Time2 VDS = 50V, ID = 10A, VGS = 10V Total Gate Charge2 IF = 10A, VGS = 0V nSVDD = 50V ID @ 10A, VGS = 10V, RGS =6Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr Drain-Source Breakdown Voltage VDS = 10V, ID = 10A VGS(th) Forward Transconductance1 Qg Gate-Drain Charge2 Qgd VGS = 10V, ID = 10A Zero Gate Voltage Drain Current Qgs Ciss Coss Crss DYNAMIC mA Gate-Source Charge2 Reverse Transfer Capacitance nC VVDS = VGS, ID = 250mA VGS = 0V, ID = 250mAV(BR)DSS STATIC IDSS VDS = 0V, VGS = ± 20V gfs VDS = 80V , VGS = 0V pF SYMBOL Input Capacitance IF = 10A, dlF/dt = 100A / mS Gate Threshold Voltage PARAMETER VGS = 0V, VDS = 25V, f = 1MHz Drain-Source On-State Resistance1 Output Capacitance VDS = 80V, VGS = 0V , TJ = 125 ° C Gate-Body Leakage REV 1.0 2 2017/1/16

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/16

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/16

N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/16

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube REV 1.0 6 2017/1/16

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/16

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/16