P3710BD UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2Starting Tj =25 ° C,L=1mH,VDD=50V. °C-55 to 150 2.5 SYMBOL MAXIMUM Junction-to-Case SYMBOL LIMITS A VVGS VDS V W UNITS 128 mJ 100 ± 20 37mΩ @VGS = 10V 25A Drain-Source Voltage 50PD ID TC = 25 ° C 100V Continuous Drain Current TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Pulsed Drain Current1 Avalanche Current2 IAS IDM Junction & Storage Temperature Range EAS THERMAL RESISTANCE Gate-Source Voltage ID TYPICAL TC = 100 ° C RqJC Avalanche Energy2 Power Dissipation Tj, Tstg TC = 25 ° C REV 1.3 1 2016/6/2

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 2 2.5 ± 100 nA 35 48 28 37 23 S 996 127 1 Ω 3.9 25 A 1.2 V 36 nS 52 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. VGS = 0V, ID = 250mA STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = 25V, f = 1MHz LIMITS VDS = 80V, VGS = 0V, TJ = 125 ° C mA DYNAMIC VDS = 80V, VGS = 0V QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IF = 10A, dlF/dt = 100A / mS pF nSVDD = 50V, ID @ 10A, VGS = 10V, RGS = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr nCQgs Crss gfs IS VSD trr IF = 10A, VGS = 0V td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Coss PARAMETER Qg VGS = 10V, VDS = 50V, ID = 10A IDSS Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Total Gate Charge2 Ciss VDS = 10V, ID = 10A Input Capacitance Forward Transconductance1 Qgd Output Capacitance Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA V(BR)DSS TEST CONDITIONS Gate-Body Leakage VGS(th) VDS = 0V, VGS = ± 20V Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz mΩ VGS = 4.5V, ID = 10A SYMBOL UNITS VGS = 10V, ID = 10A Drain-Source On-State Resistance1 RDS(ON) REV 1.3 2 2016/6/2

N-Channel Enhancement Mode MOSFET REV 1.3 3 2016/6/2

N-Channel Enhancement Mode MOSFET REV 1.3 4 2016/6/2

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.3 5 2016/6/2

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.3 6 2016/6/2

N-Channel Enhancement Mode MOSFET REV 1.3 7 2016/6/2

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.3 8 2016/6/2