P3710AV

P3710AV UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. RqJA 100 113 SYMBOL ID IDM UNITS 4.4 5.5 THERMAL RESISTANCE TYPICAL ± 20 LIMITS V A TA = 25 ° C TA = 70 ° C 1 2.5 VDS IAS RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage ID 37mΩ @VGS = 10V100V Continuous Drain Current W 5.5A Avalanche Energy L = 0.1mH Pulsed Drain Current1 TA = 25 ° C Avalanche Current Power Dissipation VGS EAS SYMBOL PD TJ, TSTG MAXIMUM mJ °C-55 to 150 50Junction-to-Ambient Junction & Storage Temperature Range Ver 1.0 1 2012/4/13

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.8 2.8 4 ± 100 nA 36 55 25 37 7 S 2730 284 172 2.4 Ω 5.5 A 1.2 V 60 nS 126 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. UNIT Zero Gate Voltage Drain Current Forward Transconductance1 gfs VDS = 5V, ID = 5.5A VGS = 0V, VDS = 25V, f = 1MHz pF mΩ Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz DYNAMIC Input Capacitance Ciss Output Capacitance mAIDSS VDS = 80V, VGS = 0V , TJ = 55 ° C Coss VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V STATIC LIMITS Drain-Source Breakdown Voltage VGS(th) IGSS V(BR)DSS V TEST CONDITIONS VGS = 0V, ID = 250mA VDS = 80V, VGS = 0V Gate-Body Leakage Gate Threshold Voltage PARAMETER SYMBOL Reverse Transfer Capacitance Crss Total Gate Charge2 Qg VDS = 0.5V(BR)DSS, ID = 5.5A, VGS = 10V nCGate-Source Charge2 Qgs Gate-Drain Charge2 Qgd Turn-On Delay Time2 td(on) VDS = 50V, ID @ 5.5A, VGS = 10V, RGEN = 6Ω nSRise Time2 tr Turn-Off Delay Time2 td(off) Fall Time2 tf Continuous Current IS Forward Voltage1 VSD IF = 5.5A, VGS = 0V Diode Reverse Recovery Time trr IF = 5.5A, dl/dt = 100A / mS Diode Reverse Recovery Charge Qrr Drain-Source On-State Resistance1 VGS = 10V, ID = 5.5ARDS(ON) VGS = 7V, ID = 3A SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Ver 1.0 2 2012/4/13

N-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/4/13

N-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/4/13

N-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/13