P3606HK UNIKC | Alldatasheet

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Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. Junction-to-Case Junction-to-Ambient2 38mΩ @VGS = 10V 15A ° C / W RqJC RqJA IDRDS(ON) VGS IDM V A Drain-Source Voltage 60 LIMITS Gate-Source Voltage TA = 70 ° C TA = 25 ° C PD TC = 25 ° C TC = 100 ° C mJ 17.3 Pulsed Drain Current1 18.6 60V UNITS ± 20 VDS PARAMETERS/TEST CONDITIONS SYMBOL ID Power Dissipation TA = 70 ° C Continuous Drain Current Avalanche Energy Power Dissipation TC = 100 ° C TA = 25 ° C PD Avalanche Current IAS EASL = 0.1mH TC = 25 ° C TJ, TSTG SYMBOL MAXIMUM W °C-55 to 150 TYPICAL 1.5 2.3 20.8 Continuous Drain Current3 ID THERMAL RESISTANCE Operating Junction & Storage Temperature Range REV 1.1 1 2015/12/10

Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 36 47 33 38 29 S 541 1.3 Ω VGS=10V 13.3 VGS=4.5V 7.7 1.7 4.6 15 A 1.3 V 14.6 nS 5 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Reverse Recovery Time trr IF = 5A, dlF/dt = 100A /mS Total Gate Charge2 Qg Forward Voltage1 IS VSD Reverse Recovery Charge VDS = 48V, VGS = 0V , Qrr td(off) tf PARAMETER SYMBOL TEST CONDITIONS nC nSVDS = 30V,ID @ 5A, VGS=10V, RGEN= 6Ω td(on) tr IF = 5A, VGS = 0V VDS = 30V, ID = 5A SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Fall Time2 UNITS Turn-On Delay Time2 Turn-Off Delay Time2 Rise Time2 VGS = 10V, ID = 5A Qgd Qgs VGS = 0V, VDS = 25V, f = 1MHz Crss V Continuous Current3 STATIC mΩ Input Capacitance Output Capacitance Gate-Drain Charge2 Gate Resistance Gate-Source Charge2 Reverse Transfer Capacitance pF Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 5A VDS = 5V, ID = 5AForward Transconductance1 DYNAMIC Ciss Coss Rg VGS = 0V, VDS = 0V, f = 1MHz gfs IGSS IDSS VDS = 40V, VGS = 0V , TJ = 55 ° C VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V LIMITS VGS = 0V, ID = 250mADrain-Source Breakdown Voltage mA V(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage VGS(th)Gate Threshold Voltage REV 1.1 2 2015/12/10

Dual N-Channel Enhancement Mode MOSFET REV 1.1 3 2015/12/10

Dual N-Channel Enhancement Mode MOSFET REV 1.1 4 2015/12/10

Dual N-Channel Enhancement Mode MOSFET *散热片形状会因为封装厂框架不同而有所差异。 REV 1.1 5 2015/12/10

Dual N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.1 6 2015/12/10

Dual N-Channel Enhancement Mode MOSFET REV 1.1 7 2015/12/10

Dual N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2015/12/10