P3606BD

P3606BD UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Pulsed Drain Current1 Avalanche Current 3.2 mJEAS THERMAL RESISTANCE TC= 100° C ID TC= 25 ° C 60V Continuous Drain Current TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 36mΩ @VGS = 10V 22A Gate-Source Voltage TC= 25 ° C Junction & Storage Temperature Range SYMBOL IDM Avalanche Energy L=0.1mH TYPICAL PD Tj, Tstg SYMBOL LIMITS VGS IAS ± 20 A -55 to 150 15.6 W V UNITS ID Drain-Source Voltage VDS 60 RqJA 62.5 ° C / W Power Dissipation MAXIMUM Junction-to-Case Junction-to-Ambient RqJC REV 1.0 1 2014/12/4

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 34 47 31 36 30 S 545 1.8 Ω 13.8 7.9 4.9 22 A 1.3 V 17.6 nS 8.8 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. IF = 20A, VGS = 0V td(off) tf IS VSD trr Qrr VGS = 4.5V Qgs Qgd td(on) tr VGS = 10V SYMBOL V(BR)DSS Drain-Source Breakdown Voltage IF = 20A, dlF/dt = 100A /ms gfs Ciss Coss Crss Rg Qg UNITSTEST CONDITIONS mA VGS =10V, ID =20A VGS = 0V, ID = 250mA Gate-Body Leakage mΩ IGSS IDSS RDS(ON) V pF Zero Gate Voltage Drain Current Gate Threshold Voltage VDS = 30V , ID @ 20A, VGS = 10V, RGEN =6Ω Turn-On Delay Time2 Rise Time2 Fall Time2 Turn-Off Delay Time2 VDS = VGS, ID = 250mA VGS = 0V, VDS = 25V, f = 1MHz VDS = 30V, ID = 20A VGS = 0V, VDS = 0V, f = 1MHz DYNAMIC nC Total Gate Charge2 Gate-Drain Charge2 VDS = 5V, ID =20A Reverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time Gate-Source Charge2 Drain-Source On-State Resistance1 Output Capacitance Input Capacitance SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nS VDS =48V, VGS = 0V PARAMETER STATIC Gate Resistance Reverse Transfer Capacitance LIMITS Forward Transconductance1 VDS =40V, VGS = 0V, TJ = 125° C VGS =4.5V, ID =15A VDS = 0V, VGS = ± 20V VGS(th) REV 1.0 2 2014/12/4

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/12/4

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/12/4

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/12/4