P3304EV

P3304EV UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle  1% -7A MAXIMUM Operating Junction & Storage Temperature Range Power Dissipation 33mΩ @VGS = -10V Pulsed Drain Current1 TA = 25 ° C TA = 70 ° C 1.3 2.5 RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage ID -40V Continuous Drain Current °C-55 to 150 Junction-to-Ambient 50 SYMBOL TJ, TSTG TYPICAL ID IDM SYMBOL VGS VDS PD TA = 25 ° C UNITS -30 ± 20 -40 LIMITS V A W THERMAL RESISTANCE RqJA Ver 1.0 1 2012/4/13

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -40 -1.0 -2.0 -3.0 ± 100 nA -10 -30 A 40 60 25 33 18 S 1000 450 108 3.2 2.7 9.7 19.4 14.0 28.1 28.7 51.6 17.8 32.2 -1.3 -2.6 -1 V 80 nS 75 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. Reverse Recovery Time trr IF = IS, dlF/dt = 100A /mS Continuous Current IS Forward Voltage1 VSD IF = IS, VGS = 0V mΩDrain-Source On-State Resistance1 VGS = -10V, ID = -7ARDS(ON) VGS = -5V, ID = -5A V VDS = -32V, VGS = 0V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Pulsed Current3 ISM A Turn-On Delay Time2 td(on) VDS = -20V, ID @ -1A, VGS = -10V, RGS = 6Ω nSRise Time2 tr Turn-Off Delay Time2 td(off) Fall Time2 tf Total Gate Charge2 Qg Crss VDS = 0.5V(BR)DSS, ID = -7A, VGS = -10V nCGate-Source Charge2 Qgs Gate-Drain Charge2 Qgd Gate Threshold Voltage Gate-Body Leakage DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1MHz pFOutput Capacitance Coss Reverse Transfer Capacitance Forward Transconductance1 gfs VDS = -10V, ID = -7A TEST CONDITIONS STATIC LIMITS UNIT VGS = 0V, ID = -250mAV(BR)DSS ID(ON) VDS = -5V, VGS = -10V Reverse Recovery Charge Qrr PARAMETER SYMBOL On-State Drain Current1 Drain-Source Breakdown Voltage VGS(th) Zero Gate Voltage Drain Current mA IGSS IDSS VDS = -30V, VGS = 0V , TJ = 125 ° C VDS = VGS, ID = -250mA VDS = 0V, VGS = ± 20V Ver 1.0 2 2012/4/13

P-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/4/13

P-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/4/13

P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/13