P3203CMG UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. Drain-Source Voltage VDS 30 V PD TJ, TSTG MAXIMUMTHERMAL RESISTANCE Operating Junction & Storage Temperature Range SYMBOL TA = 25 ° C TA = 70 ° C Power Dissipation Continuous Drain Current2 TA = 25 ° C SYMBOL Pulsed Drain Current1,2 RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 32mΩ @VGS = 4.5V 6A ID 30V RqJA 100Junction-to-Ambient3 VGS LIMITS ID IDM TYPICAL 0.8 1.25 W UNITS ± 12 A °C-55 to 150 REV 1.1 1 2014/7/28

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.45 0.7 1.2 ± 100 nA 30 A 32 52 24 32 22 28 33 S 620 1.5 4.5 6 A 1.3 V 10.5 nS 2.1 mC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. IF = 1.3A, VGS = 0V Continuous Current Forward Voltage1 IS VSD VDS = 15V ID @ 5A, VGS = 4.5V, RGS = 6Ω nC nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) Fall Time2 Qg Qgs Qgd td(on) tr td(off) tf Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Total Gate Charge2 VDS = 15V, VGS = 4.5V, ID = 5A Input Capacitance Output Capacitance Reverse Transfer Capacitance mΩ Gate-Source Charge2 gfs VGS = 0V, VDS = 15V, f = 1MHz pF VDS = 5V, VGS = 4.5V VGS = 4.5V, ID = 5A STATIC LIMITS UNITPARAMETER SYMBOL VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage VDS = 24V, VGS = 0V On-State Drain Current1 VDS = 5V, ID = 5A Ciss Coss TEST CONDITIONS Crss RDS(ON) VGS = 10V, ID = 6A IGSS IDSS mA Drain-Source Breakdown Voltage VGS = 2.5V, ID = 4A VDS = 20V, VGS = 0V , TJ = 55 ° C VDS = VGS, ID = 250mA ID(ON) Drain-Source On-State Resistance1 VDS = 0V, VGS = ± 12V Reverse Recovery Time Reverse Recovery Charge trr Qrr IF = 6A, dlF/dt = 100 A/ms Gate Threshold Voltage DYNAMIC V REV 1.1 2 2014/7/28

N-Channel Enhancement Mode MOSFET REV 1.1 3 2014/7/28

N-Channel Enhancement Mode MOSFET REV 1.1 4 2014/7/28

N-Channel Enhancement Mode MOSFET REV 1.1 5 2014/7/28