P3202CMA

P3202CMA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. PD TJ, TSTGOperating Junction & Storage Temperature Range 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,in a still air SYMBOL °C-55 to 150 RqJA 100Junction-to-Ambient2 environment with TA =25° C. ID 20V TA = 25 ° C TA = 70 ° C Power Dissipation Continuous Drain Current RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 32mΩ @VGS = 4.5V TA = 25 ° C SYMBOL Pulsed Drain Current1 THERMAL RESISTANCE VGS LIMITS ID IDM TYPICAL 0.8 1.3 MAXIMUM W UNITS ± 12 V A REV 1.0 1 2015/8/26

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.45 0.7 1.2 ± 100 nA 29 80 22 50 19 32 30 S 917 140 119 1.3 4.4 0.9 A 1.3 V 12 nS 4 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Turn-Off Delay Time2 Qg Fall Time2 Qgs Qgd td(on) tr Gate-Drain Charge2 td(off) Turn-On Delay Time2 mΩ Rise Time2 IF = 5A, VGS = 0V Continuous Current Forward Voltage1 IS VSD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) VDD = 10V ID @ 5A, VGEN= 4.5V, RG = 6Ω nS tf VDS = 5V, ID = 5A VDS = 10V,VGS = 4.5V, ID= 5A pF Crss Gate-Source Charge2 VGS = 2.5V, ID = 4A STATIC LIMITS UNITS nC PARAMETER TEST CONDITIONS Drain-Source Breakdown Voltage Forward Transconductance1 gfs Input Capacitance VGS(th) VGS = 0V, ID = 250mA SYMBOL Reverse Recovery Change Qrr VGS = 0V, VDS = 10V, f = 1MHz VGS = 1.8V, ID = 2A Zero Gate Voltage Drain Current V(BR)DSS Total Gate Charge2 mAVDS = 10V, VGS = 0V , TJ = 70 ° C VDS = VGS, ID = 250mA Ciss Coss DYNAMIC Output Capacitance Gate-Body Leakage VDS = 16V, VGS = 0V Gate Threshold Voltage VDS = 0V, VGS = ± 12V Reverse Recovery Time trr IF = 5A, dlF/dt = 100A /mS Reverse Transfer Capacitance V IGSS IDSS Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 5A REV 1.0 2 2015/8/26

N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/8/26

N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/8/26

N-Channel Enhancement Mode MOSFET REV 1.0 5 2015/8/26

N-Channel Enhancement Mode MOSFET A. Marking Information ( 此产品代码为：15 ) B. Tape&Reel Information:3000pcs/Reel 160 ψ 180 1∮ ψ FEED DIRECTION ∮2.0 0.05 ∮ 9.0 0.3 ∮11.4 1 60 1 ψ 1.0 0.25 ∮4.00 0.1 3.50 0.05∮ ∮1.55 0.05

13.5 MAX

1.4max

8 MAX

∮ 8.00 0.3 REV 1.0 6 2015/8/26

N-Channel Enhancement Mode MOSFET REV 1.0 7 2015/8/26

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2015/8/26