P3010BV

P3010BV UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. MAXIMUM Drain-Source Voltage VDS 100 V -55 to 150 EAS Power Dissipation Tj, Tstg 2.3 THERMAL RESISTANCE TA= 25 ° C L =1mH PD Pulsed Drain Current1 Avalanche Current RqJA Junction & Storage Temperature Range Gate-Source Voltage Avalanche Energy TYPICAL TA =70 ° C ID TA = 25 ° C 100V Continuous Drain Current TA = 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 30mΩ @VGS = 10V 5.8A W UNITS 4.6 72 mJ 1.5 ± 20 IDM SYMBOL 5.8 LIMITS A VGS ID IAS Junction-to-Ambient 53 Junction-to-Case RqJC SYMBOL ° C / W REV 1.0 1 2014/11/21

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2.3 ± 100 nA 27 35 25.5 30 46 S 1908 138 0.8 Ω 5.6 12.5 1.9 A 1.2 V 28 nS 25 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. STATIC Gate-Body Leakage VGS(th)Gate Threshold Voltage VDS = VGS, ID = 250mA PARAMETER mΩ VGS = 4.5V, ID = 5A SYMBOL UNITS Zero Gate Voltage Drain Current VGS = 0V, ID = 250mA mAVDS = 80V, VGS = 0V, TJ = 55 ° C Qgd IGSS Output Capacitance Qg Forward Transconductance1 Ciss VDS = 5V, ID = 5A Input Capacitance gfs Reverse Transfer Capacitance Total Gate Charge2 Gate Resistance VGS = 10V, ID = 5A Drain-Source On-State Resistance1 RDS(ON) LIMITS V(BR)DSS Fall Time2 nSVDS = 50V, ID @ 5A,VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Diode Reverse Recovery Charge Continuous Current Forward Voltage1 Diode Reverse Recovery Time IS VSD trr Qrr Gate-Source Charge2 Drain-Source Breakdown Voltage V TEST CONDITIONS VDS = 50V, ID = 5A,VGS = 10V VGS = 0V, VDS = 25V, f = 1MHz Rg pF nCQgs DYNAMIC Gate-Drain Charge2 IF = 5A, dl/dt = 100A / mS VDS = 0V, VGS = ± 20V IDSS Coss Crss VDS = 80V, VGS = 0V IF = 5A, VGS = 0V VGS = 0V,VDS = 0V,f = 1MHz REV 1.0 2 2014/11/21

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/11/21

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/11/21

N-Channel Logic Level Enhancement Mode MOSFET REV 1.0 5 2014/11/21