P2B60AMA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. RqJA 178Junction-to-Ambient RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage SYMBOL °C-55 to 150 PD TJ, TSTGOperating Junction & Storage Temperature Range TA = 25 ° C 40mA SYMBOL ID TA = 25 ° C TA = 70 ° C Power Dissipation Continuous Drain Current 200Ω @VGS = 10V600V Pulsed Drain Current1 THERMAL RESISTANCE VGS LIMITS ID IDM TYPICAL 0.4 0.7 MAXIMUM W UNITS 120 ± 30 V mA REV 1.0 1 2015/4/29

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 600 2 3.4 4 ± 100 nA 110 200 Ω 0.024 S 16.6 8.5 3.4 4.3 0.5 3.2 170 38 mA 1.2 V 160 nS 14 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Fall Time2 Qgs Qgd td(on) tr Gate-Drain Charge2 td(off) Turn-On Delay Time2 Rise Time2 IF = 16mA, VGS = 0V Continuous Current Forward Voltage1 IS VSD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( TJ = 25 °C ) VDD = 300V ID @ 16mA, VGEN = 10V, RG = 6ΩTurn-Off Delay Time2 nC nS RDS(ON) tf VDS = 10V, ID = 16mA VDS = 480V,VGS = 10V, ID= 16mA pF Crss Qg TEST CONDITIONS Gate-Source Charge2 STATIC LIMITS UNITS Drain-Source On-State Resistance1 VGS(th) VGS = 0V, ID = 250mA Total Gate Charge2 Drain-Source Breakdown Voltage Forward Transconductance1 gfs Input Capacitance PARAMETER Gate Threshold Voltage SYMBOL Reverse Recovery Change Qrr VGS = 0V, VDS = 25V, f = 1MHz VGS = 10V, ID = 16mA Zero Gate Voltage Drain Current V(BR)DSS Ciss Coss DYNAMIC Output Capacitance Gate-Body Leakage VDS = 600V, VGS = 0V VDS = 0V, VGS = ± 30V Reverse Recovery Time trr IF = 16mA, dlF/dt = 100A /mS Reverse Transfer Capacitance V IGSS IDSS mAVDS = 480V, VGS = 0V , TJ = 55 ° C VDS = VGS, ID = 250mA REV 1.0 2 2015/4/29

N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/4/29

N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/4/29

N-Channel Enhancement Mode MOSFET REV 1.0 5 2015/4/29