P2803HVG

P2803HVG UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25° C. The value in any given application depends on the user's specific board design. TA = 70 ° C THERMAL RESISTANCE SYMBOL PD TA = 25 ° C RqJA MAXIMUM Power Dissipation SYMBOL VDS TA = 25 ° C LIMITS ID RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 27.5mΩ @VGS = 10V 6.5A ID 30V Continuous Drain Current2 Junction-to-Ambient3 Operating Junction & Storage Temperature Range Pulsed Drain Current1,2 Avalanche Current EASAvalanche Energy L = 0.1mH IAS TJ, TSTG A TYPICAL 1.3 VGS °C-55 to 150 IDM mJ W UNITS ± 20 6.5 V Ver 1.0 1 2012/4/13

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.0 1.5 2.5 ± 100 nA 30 A 27.0 40.0 18.0 27.5 19 S 457 107 2.4 Ω 3.6 6.5 A 1 V 12 nS 3 mC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. VDS = 0.5V(BR)DSS, VGS = 10V, ID = 7A mΩDrain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 7A Fall Time2 IF = 7A, dlF/dt = 100A / mS nSVDS = 0.5V(BR)DSS, ID @ 7A VGS = 10V, RGEN = 6Ω td(on) tr td(off) tf Forward Voltage1 Reverse Recovery Time IS VSD Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 7A, VGS = 0V Output Capacitance Gate-Drain Charge2 Gate-Source Charge2 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz STATIC LIMITS UNITPARAMETER SYMBOL TEST CONDITIONS QrrReverse Recovery Charge Continuous Current Turn-On Delay Time2 Rise Time2 trr nC Drain-Source Breakdown Voltage VGS = 4.5V, ID = 6A VDS = 5V, ID = 7A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current Ciss Coss Crss Qgd Qgs Reverse Transfer Capacitance Total Gate Charge2 Qg VGS = 0V, VDS = 15V, f = 1MHz gfs Gate Threshold Voltage DYNAMIC V IGSS pF VDS = 24V, VGS = 0V Input Capacitance mAVDS = 20V, VGS = 0V , TJ = 55 ° C VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V IDSS Gate-Body Leakage Ver 1.0 2 2012/4/13

N-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/4/13

N-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/4/13

N-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/13