P2610BTF UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Drain-Source Voltage VDS Continuous Drain Current Junction & Storage Temperature Range Pulsed Drain Current1 Avalanche Current TC = 25 ° C TC = 100 ° C IAS ID 100V RqJC RqJA 3.3 62.5 TC = 25 ° C Tj, Tstg RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 26.8mΩ @VGS = 10V 24A ID Junction-to-Ambient THERMAL RESISTANCE TYPICAL Power Dissipation 37.9 MAXIMUM Avalanche Energy L = 0.1mH A mJ 100 V 11.7 UNITS 6.9 IDM VGS SYMBOL ± 20 -55 to 150 LIMITS EAS Junction-to-Case PD ° C / W W SYMBOL REV 1.1 1 2018/7/25

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2.3 ± 100 nA 19.3 26.8 23.3 35 50 S 1900 149 0.8 Ω 41.5 22.4 11.6 24 A 1.2 V 32 nS 36 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. LIMITS UNITSPARAMETER Turn-On Delay Time2 Turn-Off Delay Time2 Fall Time2 Rise Time2 IF = 10A, VGS = 0V nSVDS = 50V ,ID @ 10A, VGS = 10V, RGEN = 6Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) QrrDiode Reverse Recovery Charge Continuous Current Forward Voltage1 Diode Reverse Recovery Time IS VSD trr Input Capacitance Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz Forward Transconductance1 Qg(VGS= 10V) Qgs Total Gate Charge2 Qg(VGS= 4.5V) Gate Resistance Rg VDS = 50V,ID = 10A nC Coss Crss Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Qgd VGS = 0V, VDS = 0V, f = 1MHz pF VDS = 80V, VGS = 0V, TJ = 125 ° C STATIC SYMBOL gfs DYNAMIC VGS = 10V, ID = 10A mA VDS = 5V, ID = 10A Drain-Source On-State Resistance1 Zero Gate Voltage Drain Current Gate-Body Leakage TEST CONDITIONS IF = 10A , dI/dt= 100A/ms Gate Threshold Voltage Drain-Source Breakdown Voltage VGS(th) VDS = 80V, VGS = 0V V(BR)DSS Ciss IGSS IDSS VVDS = VGS, ID = 250mA RDS(ON) VGS = 4.5V, ID = 10A mΩ VDS = 0V, VGS = ± 20V VGS = 0V, ID = 250mA REV 1.1 2 2018/7/25

N-Channel Enhancement Mode MOSFET REV 1.1 3 2018/7/25

N-Channel Enhancement Mode MOSFET REV 1.1 4 2018/7/25

N-Channel Enhancement Mode MOSFET *因各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.1 5 2018/7/25

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) REV 1.1 6 2018/7/25

N-Channel Enhancement Mode MOSFET REV 1.1 7 2018/7/25

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2018/7/25