P2610BT UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. A ± 20 EASL = 0.1mH VGS Pulsed Drain Current1 Avalanche Current IAS V 62.5 PD 1.5 TC = 25 ° C Junction & Storage Temperature Range Power Dissipation TC = 100 ° C ID 100V Drain-Source Voltage TC = 25 ° C Continuous Drain Current THERMAL RESISTANCE RDS(ON) RqJC PARAMETERS/TEST CONDITIONS Gate-Source Voltage 26.8mΩ @VGS = 10V 36A TC = 100 ° C Avalanche Energy mJ Junction-to-Ambient TJ, TSTG Junction-to-Case UNITS ID IDM SYMBOL LIMITS -55 to 150 W TYPICAL ° C / W SYMBOL RqJA VDS 100 MAXIMUM REV 1.0 1 2014/10/14

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2.3 ± 100 nA 22 26.8 23 35 50 S 1910 148 0.8 Ω 21.5 36 A 1.2 V 31 nS 35 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. mA SYMBOL TEST CONDITIONS IF = 10A,dI / dt = 100 A/ms Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V, TJ = 125 ° C STATIC UNITS Output Capacitance SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 nS VSD td(off) tf Rise Time2 Turn-Off Delay Time2 Fall Time2 VDS = 50V, ID @ 10A, VGS = 10V, RGEN = 6Ω td(on) tr QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS IF = 10A, VGS = 0V trr pF VDS = 80V, VGS = 0V IGSS Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance VGS = 10V, ID = 10A VDS = 5V, ID = 10A Qgd Gate Threshold Voltage VVDS = VGS, ID = 250mA Rg VGS = 0V, VDS = 0V, f = 1MHz Ciss Crss Coss mΩ VGS = 0V, ID = 250mA VGS(th) Qgs VGS = 0V, VDS = 25V, f = 1MHz LIMITS VDS = 50V, ID = 10A Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 10A V(BR)DSSDrain-Source Breakdown Voltage Gate-Body Leakage VDS = 0V, VGS = ± 20V PARAMETER Total Gate Charge2 Qg(VGS=4.5V Forward Transconductance1 gfs Qg(VGS=10V) DYNAMIC Input Capacitance nC Gate-Drain Charge2 REV 1.0 2 2014/10/14

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/10/14

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/10/14

N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/10/14