P2610BS

P2610BS UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. TC = 25 ° C Power Dissipation TJ, TSTG TC = 25 ° C TC = 100 ° C WPD THERMAL RESISTANCE 100 RqJCJunction-to-Case ID IAS A IDM SYMBOL LIMITS VDS 100V Continuous Drain Current mJ6EAS ± 20 ID UNITS Drain-Source Voltage TO-263 RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 26.8mΩ @VGS = 10V 36A -55 to 150 1.5 MAXIMUMTYPICAL VGS Pulsed Drain Current1 Junction & Storage Temperature Range SYMBOL V Junction-to-Ambient RqJA 62.5 ° C / W Avalanche Current Avalanche Energy L = 0.1mH REV1.0 1 2014/10/24

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2 ± 100 nA 23 35 22 26.8 50 S 1929 139 0.8 Ω 21.5 36 A 1.2 V 32 nS 36 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. mΩ TEST CONDITIONS Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 10A PARAMETER VDS = 80V, VGS = 0V VGS = 4.5V, ID = 10A V(BR)DSS STATIC VDS = 80V, VGS = 0V , TJ = 125 ° C Drain-Source Breakdown Voltage VGS = 0V, ID = 250mA SYMBOL Fall Time2 nSRise Time2 Gate-Drain Charge2 IF = 10A, VGS = 0V VDS = 50V,ID @ 10A, VGS = 10V, RGEN = 6Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 Turn-Off Delay Time2 QrrDiode Reverse Recovery Charge Continuous Current Forward Voltage1 Diode Reverse Recovery Time IS VSD trr Reverse Transfer Capacitance nC pF Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Input Capacitance Output Capacitance QgsGate-Source Charge2 VDS = 5V, ID = 10A VGS(th) Forward Transconductance1 gfs Gate-Body Leakage IGSS VDS = 0V, VGS = ± 20V IDSSZero Gate Voltage Drain Current Qg(VGS=10V) VDS = 50V,ID = 10A Ciss Coss Crss Qgd Qg(VGS=4.5V mA VDS = VGS, ID = 250mA V LIMITS UNITS IF = 10A, dl/dt = 100A / mS Gate Threshold Voltage VGS = 0V, VDS = 25V, f = 1MHz DYNAMIC Total Gate Charge2 REV1.0 2 2014/10/24

N-Channel Enhancement Mode MOSFET REV1.0 3 2014/10/24

N-Channel Enhancement Mode MOSFET REV1.0 4 2014/10/24

N-Channel Enhancement Mode MOSFET REV1.0 5 2014/10/24