P2610BI UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Calculated continuous current based on maximum allowable junction temperature. ± 20 TYPICAL °C-55 to 150Junction & Storage Temperature Range SYMBOL MAXIMUM RqJCJunction-to-Case THERMAL RESISTANCE 9.7 13.9Avalanche Current W RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage ID Continuous Drain Current2 TC = 25 ° C 100V Pulsed Drain Current1 26.8mΩ @VGS = 10V 36A Drain-Source Voltage Power Dissipation EAS 31TC = 100 ° C PD A Junction-to-Ambient RqJA 78TC = 25 ° C SYMBOL VGS mJ V 1.6 LIMITS UNITS VDS 100 ID IAS IDM TJ, TSTG 62.5 ° C / W Avalanche Energy L = 0.1mH REV 1.0 1 2017/2/16

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2.3 ± 100 nA 24 35 22 26.8 55 S 1918 139 0.8 Ω 41.5 5.7 11.6 36 A 1.2 V 29.3 nS 290 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Calculated continuous current based on maximum allowable junction temperature. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 10A, VGS = 0V nS Qgs nC VDS = 5V, ID = 10AForward Transconductance1 Output Capacitance Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 td(on) tr td(off) tf VDS = 50V ID @ 10A, VGS = 10V, RGEN = 6Ω trr Qrr IS VSD IF = 10A, dlF/dt = 100A / mS Reverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time gfs VDS = 80V, VGS = 0V V STATIC LIMITS UNITSPARAMETER SYMBOL mA IGSS IDSS Gate-Body Leakage VDS = 80V, VGS = 0V , TJ = 125 ° CZero Gate Voltage Drain Current VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V Gate Threshold Voltage VGS(th) Drain-Source Breakdown Voltage VGS = 0V, ID = 250mAV(BR)DSS TEST CONDITIONS VGS = 10V, ID = 10A Total Gate Charge2 VGS = 0V, VDS = 25V, f = 1MHz pF Ciss Coss Input Capacitance DYNAMIC Crss Qg VGS = 10 V, VDS = 50V , ID = 10AGate-Source Charge2 Gate-Drain Charge2 Reverse Transfer Capacitance Qgd Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 10A Ω Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz REV 1.0 2 2017/2/16

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/2/16

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:75pcs/Tube REV 1.0 6 2017/2/16

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/2/16