P2610BD UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Calculated continuous current based on maximum allowable junction temperature. 1.6 Junction & Storage Temperature Range SYMBOL °C-55 to 150 MAXIMUM Junction-to-Case 62.5 ° C / W IDM SYMBOL LIMITS A VVGS VDS V W UNITS 9.7 mJ 100 ± 20 Drain-Source Voltage TC = 25 ° C ID TC = 25 ° C 100V Continuous Drain Current2 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 26.8mΩ @VGS = 10V 36A Pulsed Drain Current1 Avalanche Current IAS 13.9 EAS THERMAL RESISTANCE Avalanche Energy TYPICAL TC = 100 ° C Gate-Source Voltage L =0.1mH ID PD Junction-to-Ambient RqJA RqJC Power Dissipation Tj, Tstg REV 1.2 1 2016/6/6

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2.3 ± 100 nA 24 35 22 26.8 55 S 1918 139 0.8 Ω 41.5 5.7 11.6 36 A 1.2 V 29.3 nS 290 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Calculated continuous current based on maximum allowable junction temperature. Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz IF = 10A, dlF/dt = 100A / μS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS VGS = 0V, ID = 250mA pF STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = 25V, f = 1MHz nCQgs mA DYNAMIC VDS = 80V, VGS = 0V QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 10A, VGS = 0V nSVDS = 50V, ID @ 10A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS VGS = 10 V, VDS = 50V, ID = 10A gfs Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Total Gate Charge2 Ciss VDS = 5V, ID = 10A Input Capacitance Qgd Output Capacitance Qg Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA VDS = 80V, VGS = 0V, TJ = 125 ° C PARAMETER Forward Transconductance1 VGS = 10V, ID = 10A Drain-Source On-State Resistance1 RDS(ON) mΩ VGS = 4.5V, ID = 10A SYMBOL UNITS Gate-Body Leakage VGS(th) REV 1.2 2 2016/6/6

N-Channel Enhancement Mode MOSFET REV 1.2 3 2016/6/6

N-Channel Enhancement Mode MOSFET REV 1.2 4 2016/6/6

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.2 5 2016/6/6

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.2 6 2016/6/6

N-Channel Enhancement Mode MOSFET REV 1.2 7 2016/6/6

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.2 8 2016/6/6