P2402OV

P2402OV UNIKC | Alldatasheet

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N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 20V -20V SOP-8 ABSOLUTE MAXIMUM RATINGS (TC = 25 ° C Unless Otherwise Noted) CH. N P N P N P N P N P N P N P TA = 25 ° C A ID IDM TA = 25 ° C TA = 70 ° C PD V -3.2 -5.2 2.5 1.6 2.5 -55 to 150 Continuous Drain Current UNITS 6.3 ± 12 LIMITS -20 ± 12 ID N P SYMBOL -5.2A 43mΩ @VGS = -4.5V 10A24mΩ @VGS = 4.5V RDS(ON) PARAMETERS/TEST CONDITIONS VGS Drain-Source Voltage VDS Gate-Source Voltage Channel Pulsed Drain Current1 1.6 Power Dissipation Junction & Storage Temperature Range -21 TJ, TSTG TA = 70 ° C W Ver 1.0 1 2012/10/10

N&P-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature.

2 Duty cycle ≤1%

ELECTRICAL CHARACTERISTICS (TC = 25 ° C, Unless Otherwise Noted) MIN TYP MAX N 20 P -20 N 0.4 0.8 1.2 P -0.4 -0.8 -1.2 N ± 100 P ± 100 N 1 P -1 N 10 P -10 N 28 36 P 47 68 N 18 24 P 32 43 Junction-to-Ambient VDS = VGS, ID = 250mAVGS(th) IDSS VDS = VGS, ID = -250mA mΩ VGS = -2.5V, ID = -4A IGSS RDS(ON) VGS = -4.5V, ID = -5A SYMBOL RqJA Drain-Source On-State Resistance1 VGS = 4.5V, ID = 8A VGS = 0V, ID = -250mA Gate Threshold Voltage Gate-Body Leakage VDS = -16V, VGS = 0V, TJ = 55 ° C V THERMAL RESISTANCE TEST CONDITIONS CH. Drain-Source Breakdown Voltage V(BR)DSS STATIC LIMITS UNITPARAMETER VGS = 0V, ID = 250mA Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V, TJ = 55 ° C SYMBOL TYPICAL VDS = 0V, VGS = ± 12V VDS = 16V, VGS = 0V VDS = 0V, VGS = ± 12V VGS = 2.5V, ID = 5.2A MAXIMUM nA mA VDS = -16V, VGS = 0V Ver 1.0 2 2012/10/10

N&P-Channel Enhancement Mode MOSFET N 732 P 1110 N 241 P 242 N 169 P 173 N 10 P 11 N 0.8 P 2 N 3.7 P 3.5 N 6 P 23 N 5 P 45 N 16 P 45 N 5 P 32 N 1.9 P -1.9 N 7.6 P -9 N 1.3 P -1.3 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. Qgs pF Total Gate Charge2 Qg Input Capacitance nC IF = 1A, VGS = 0V IF = -1A, VGS = 0V Ciss N-Channel VGS = 0V, VDS = 10V, f = 1MHz P-Channel VGS = 0V, VDS = -10V, f = 1MHz N-Channel VDS = 10V, VGS = 4.5V, ID = 5A P-Channel VDS = -10V, VGS = -4.5V, ID = -5A DYNAMIC Reverse Transfer Capacitance Crss V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 ° C) Gate-Source Charge2 Pulsed Current3 Turn-On Delay Time2 Output Capacitance Coss Gate-Drain Charge2 Turn-Off Delay Time2 Fall Time2 Rise Time2 ISM Continuous Current Forward Voltage1 nS N-Channel VDS = 10V ID @ 1A,VGS = 4.5V,RGEN =10Ω P-Channel VDS = -4V, ID @ -1A,VGS = -4.5V,RGEN =10Ω IS td(on) A tr VSD Qgd td(off) tf Ver 1.0 3 2012/10/10

N&P-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/10/10

N&P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/10/10

N&P-Channel Enhancement Mode MOSFET Ver 1.0 6 2012/10/10

N&P-Channel Enhancement Mode MOSFET Ver 1.0 7 2012/10/10

N&P-Channel Enhancement Mode MOSFET Ver 1.0 8 2012/10/10