P2206HK UNIKC | Alldatasheet

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Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 16A. Pulsed Drain Current1 W VGSGate-Source Voltage °C-55 to 150TJ, Tstg PD A V 4.5 ° C / W ± 20 SYMBOL Operating Junction & Storage Temperature Range SYMBOL IAS 25 RqJC TC = 25 ° C UNITS 100 TYPICAL VDS 60 V ID LIMITS 31.2Avalanche Energy L =0.1mH RDS(ON) Drain-Source Voltage 22.5mΩ @VGS = 10V 23A ID TC = 25 ° C TA = 70 ° C 60V Continuous Drain Current3 TC = 100 ° C PARAMETERS/TEST CONDITIONS THERMAL RESISTANCE TC = 100 ° CPower Dissipation IDM 1.1 Junction-to-Ambient2 Junction-to-Case Continuous Drain Current TA = 25 ° C mJ RqJA PD W ID Avalanche Current EAS MAXIMUM TA= 70 ° C 4.8 Power Dissipation TA = 25 ° C 1.8 REV 1.0 1 2018/6/11

Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 21.4 30 18.7 22.5 34 S 1028 123 0.8 Ω VGS =10V 24 VGS =4.5V 13.6 2.8 7.4 20 A 1.3 V 22 nS 19 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 16A. V IF = 8A, dlF/dt = 100A / mS RDS(ON) SYMBOL V(BR)DSS TEST CONDITIONS STATIC nC UNITS Coss VDS = 0V, VGS = ± 20V gfs VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 48V, VGS = 0V pF IDSS Forward Transconductance1 VDS = 5V, ID = 8A QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 8A, VGS = 0V nSVDS = 30V, ID @ 8A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg Zero Gate Voltage Drain Current Gate Resistance IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Ciss VGS = 4.5V, ID = 8A PARAMETER Output Capacitance Drain-Source Breakdown Voltage VGS = 10V , ID = 8A VDS = 40V, VGS = 0V, TJ = 55 ° C Qgd Crss Input Capacitance VGS = 0V, VDS = 25V, f = 1MHz VDS = 30V, VGS = 10V, ID = 8A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance QgTotal Gate Charge2 Gate-Body Leakage VGS(th) LIMITS REV 1.0 2 2018/6/11

Dual N-Channel Enhancement Mode MOSFET REV 1.0 3 2018/6/11

Dual N-Channel Enhancement Mode MOSFET REV 1.0 4 2018/6/11

Dual N-Channel Enhancement Mode MOSFET REV 1.0 5 2018/6/11

Dual N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2018/6/11

Dual N-Channel Enhancement Mode MOSFET REV 1.0 7 2018/6/11

Dual N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2018/6/11