P2206BTF UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Drain-Source Voltage VDS Continuous Drain Current Junction & Storage Temperature Range Pulsed Drain Current1 Avalanche Current TC = 25 ° C TC = 100 ° C IAS ID 60V RqJC RqJA 3.2 62.5 TC = 25 ° C Tj, Tstg RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 22.5mΩ @VGS = 10V 28A ID Junction-to-Ambient EAS SYMBOLTHERMAL RESISTANCE TYPICAL Power Dissipation 39 LIMITS A mJ 60 V UNITS 100 IDM VGS SYMBOL ± 20 -55 to 150 MAXIMUM Avalanche Energy L = 0.1mH Junction-to-Case PD ° C / W W REV 1.0 1 2017/1/20

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 18 22.5 21 30 47 S 1040 133 1 Ω 3.2 8.8 102 28 A 1.3 V 22 nS 15 uC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. LIMITS UNITSPARAMETER Turn-On Delay Time2 Turn-Off Delay Time2 Fall Time2 Rise Time2 IF = 20A, VGS = 0V nSVDS = 30V , ID @ 20A, VGS = 10V, RGEN = 6Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr Input Capacitance Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz Forward Transconductance1 Qg(VGS= 10V) Qgs Total Gate Charge2 Qg(VGS= 4.5V) Gate Resistance Rg VDS = 30V,ID = 20A nC Coss Crss Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Qgd VGS = 0V, VDS = 0V, f = 1MHz VDS = 40V, VGS = 0V, TJ = 125 ° C STATIC SYMBOL gfs DYNAMIC VGS = 10V, ID = 20A mA VDS = 5V, ID = 20A IF = 20A , dIF/dt= 100A/ms Gate Threshold Voltage Drain-Source Breakdown Voltage VGS(th) VDS = 48V, VGS = 0V V(BR)DSS Ciss Zero Gate Voltage Drain Current Gate-Body Leakage Drain-Source On-State Resistance1 VGS = 0V, ID = 250mA TEST CONDITIONS pF IGSS IDSS VVDS = VGS, ID = 250mA RDS(ON) VGS = 4.5V, ID = 12A mΩ VDS = 0V, VGS = ± 20V REV 1.0 2 2017/1/20

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/20

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/20

N-Channel Enhancement Mode MOSFET *因各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/1/20

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) REV 1.0 6 2017/1/20

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/20

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/20