P2206BT UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 62.5 ° C / W ± 20VGS Pulsed Drain Current1 Avalanche Current IAS UNITS 100 ID IDM SYMBOL 60 V Avalanche Energy A mJ 62.5 33.8 W MAXIMUM Junction-to-Case Junction-to-Ambient RqJA RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 22.5mΩ @VGS = 10V60V Continuous Drain Current EAS Drain-Source Voltage VDS L = 0.1mH TYPICAL TJ, TSTG 35A ID TC = 25 ° C -55 to 150 °C LIMITS PD TC = 25 ° C RqJC 2 TC = 100 ° C Operating Junction & Storage Temperature Range SYMBOL Power Dissipation THERMAL RESISTANCE REV 1.0 1 2017/1/16

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 20 30 17.5 22.5 45 S 1042 126 1 Ω 3.6 9.1 101 35 A 1.3 V 20 nS 11 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Total Gate Charge2 Qg(VGS = 4.5V) IF = 20A, dlF/dt = 100A / mS Gate Threshold Voltage PARAMETER VGS = 0V, VDS = 25V, f = 1MHz Drain-Source On-State Resistance1 IDSS VDS = 0V, VGS = ± 20V gfs VDS = 48V , VGS = 0V SYMBOL VDS = 40V, VGS = 0V , TJ = 125 ° C VVDS = VGS, ID = 250mA VGS = 0V, ID = 250mAV(BR)DSS STATIC Coss Crss DYNAMIC mA Gate-Source Charge2 Reverse Transfer Capacitance nC pF Input Capacitance Output Capacitance VDS = 5V, ID = 20A VGS(th) Forward Transconductance1 Qg(VGS = 10V) Gate-Drain Charge2 Qgd VGS = 10V, ID = 20A Zero Gate Voltage Drain Current Qgs Ciss QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 20A, VGS = 0V nSVDD = 30V ID @ 20A, VGS = 10V, RGEN =6Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 VDS =30V,ID = 20A LIMITS RDS(ON) VGS = 4.5V, ID = 12A mΩ UNITSTEST CONDITIONS IGSS Drain-Source Breakdown Voltage Gate-Body Leakage REV 1.0 2 2017/1/16

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/16

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/16

N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/16

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube REV 1.0 6 2017/1/16

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/16

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/16