P2206BK UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value. ID Avalanche Current EAS MAXIMUM TA= 70 ° C 6.8 Power Dissipation3 TA = 25 ° C 3.6 Continuous Drain Current TA = 25 ° C mJ RqJA PD W2.3 TC = 100 ° CPower Dissipation TJ, Tstg PD Steady-State 60V Continuous Drain Current TC = 100 ° C PARAMETERS/TEST CONDITIONS THERMAL RESISTANCE RDS(ON) Drain-Source Voltage 22.5mΩ @VGS = 10V 24A ID TC = 25 ° C TA = 70 ° C Avalanche Energy L = 0.1mH TC = 25 ° C UNITS TYPICAL VDS 60 V ID LIMITS 33.8 °C-55 to 150 IAS 26 RqJC ± 20 IDM SYMBOL Operating Junction & Storage Temperature Range SYMBOL A V 4.2 ° C / W Pulsed Drain Current1 W Junction-to-Case VGSGate-Source Voltage t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 Steady-State RqJA REV 1.0 1 2017/2/10

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 19 30 16.5 22.5 35 S 1039 123 1 Ω VGS =10V 23 VGS = 4.5V 13 3.4 7.6 100 2.7 A 1.3 V 20 nS 11 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Gate-Body Leakage VGS(th) LIMITS Qgd Crss Input Capacitance VGS = 0V, VDS = 25V, f = 1MHz VDS = 30V, ID = 8A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance PARAMETER Output Capacitance Drain-Source Breakdown Voltage VGS = 10V , ID = 8A VDS = 40V, VGS = 0V, TJ = 55 ° C Gate Resistance VDS = 5V, ID = 8A QgTotal Gate Charge2 Ciss IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg Zero Gate Voltage Drain Current trr IF = 8A, VGS = 0V nSVDS = 30V, ID @ 8A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf pF IDSS QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD Forward Transconductance1 STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 48V, VGS = 0V UNITS Coss VDS = 0V, VGS = ± 20V gfs IF = 8A, dlF/dt = 100A / mS RDS(ON) SYMBOL V(BR)DSS TEST CONDITIONS VGS = 4.5V, ID = 8A V REV 1.0 2 2017/2/10

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/2/10

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/2/10

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2017/2/10

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/2/10

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/2/10