P2206BD UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2.5 100 mJEAS THERMAL RESISTANCE TC= 100° C Pulsed Drain Current1 Avalanche Current ID TC= 25 ° C 60V Continuous Drain Current TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Junction & Storage Temperature Range RqJC 22.5mΩ @VGS = 10V 32A Gate-Source Voltage TC= 25 ° C Junction-to-Case SYMBOL LIMITS VGS IAS ID V L=0.1mH TYPICAL IDM Avalanche Energy A -55 to 150 20 W Junction-to-Ambient 33.8 UNITS Drain-Source Voltage VDS 60 ± 20 RqJA 62.5 ° C / W Power Dissipation MAXIMUM PD Tj, Tstg SYMBOL REV 1.0 1 2015/6/23

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 17 22.5 19 30 40 S 1016 125 1 Ω 23.2 3.2 7.4 102 32 A 1.3 V 22 nS 15 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. VSD trr Qrr IF = 20A, VGS = 0V IF = 20A, dlF/dt = 100A /ms IS Qgs Qgd td(on) tr td(off) tf VDS =5V, ID =20A VGS = 10V gfs Ciss Coss Crss Rg Qg VGS = 4.5V UNITSTEST CONDITIONS IDSS RDS(ON) V(BR)DSS Drain-Source Breakdown Voltage Gate Threshold Voltage VDS = 30V , ID @ 20A, VGS = 10V, RGEN = 6Ω Turn-On Delay Time2 Rise Time2 Fall Time2 Zero Gate Voltage Drain Current VGS =4.5V, ID =12A VGS = 0V, ID = 250mA Gate-Body Leakage Gate-Drain Charge2 V pF mA mΩ IGSS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nS Turn-Off Delay Time2 VDS = VGS, ID = 250mA VGS = 0V, VDS = 25V, f = 1MHz VDS =30V, ID = 20V VGS = 0V, VDS = 0V, f = 1MHz DYNAMIC nC Total Gate Charge2 Reverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time Gate-Source Charge2 Drain-Source On-State Resistance1 Output Capacitance Input Capacitance Gate Resistance Reverse Transfer Capacitance LIMITSPARAMETER STATIC SYMBOL VDS = 48V, VGS = 0V Forward Transconductance1 VDS = 40V, VGS = 0V, TJ = 125° C VGS =10V, ID =20A VDS = 0V, VGS = ± 20V VGS(th) REV 1.0 2 2015/6/23

N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/6/23

N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/6/23

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2015/6/23

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2015/6/23

N-Channel Enhancement Mode MOSFET REV 1.0 7 2015/6/23

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2015/6/23