P2060ZT UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150° C. 3VDD = 50V , L = 40mH ,starting TJ = 25° C. ° C / W ± 30VGS Pulsed Drain Current1 Avalanche Current3 IAS UNITS ID IDM SYMBOL 600 V 320 W Junction-to-Ambient MAXIMUM Junction-to-Case RqJA 62.5 RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 190mΩ @VGS = 10V600V Continuous Drain Current2 EAS Drain-Source Voltage VDS Avalanche Energy3 20A ID TC = 25 ° C -55 to 150 °C LIMITS A mJ RqJC 1 TC = 100 ° C Operating Junction & Storage Temperature Range SYMBOL TYPICAL Power Dissipation THERMAL RESISTANCE PD TC = 25 ° C TJ, TSTG REV 1.0 1 2017/1/18

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 600 2 3.1 4 ± 100 nA 100 160 190 mΩ 15 S 1728 1096 112 20 A 1.5 V 395 nS 4.3 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. VGS = 10V, ID = 10A IF = 10A, dlF/dt = 100A / mS Gate Threshold Voltage PARAMETER VGS = 0V, VDS = 25V, f = 1MHz Drain-Source On-State Resistance1 IDSS VDS = 0V, VGS = ± 30V VDS = 600V, VGS = 0V , TC = 25 ° C SYMBOL VDS = 480V, VGS = 0V , TC = 100 ° C VVDS = VGS, ID = 250mA VGS = 0V, ID = 250mAV(BR)DSS STATIC DYNAMIC mA Gate-Source Charge2 Reverse Transfer Capacitance nC pF Input Capacitance Output Capacitance gfs VDS = 10V, ID = 10AForward Transconductance1 Qg Gate-Drain Charge2 Qgd Gate Voltage Drain Current Qgs Ciss RDS(ON) Coss Crss QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 10A, VGS = 0V nSVDD = 300V ID = 10A, RG =6Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 VDD = 50V, ID = 10A, VGS = 10V Total Gate Charge2 UNITSTEST CONDITIONS LIMITS IGSS Drain-Source Breakdown Voltage Gate-Body Leakage VGS(th) REV 1.0 2 2017/1/18

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/18

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/18

N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/18

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube REV 1.0 6 2017/1/18

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/18

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/18