P2003KV UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. mJ W UNITS -40 ± 25 V A TYPICAL 1.28 62.5 -30 VGS -8TA = 25 ° C ID IDM Junction-to-Ambient Operating Junction & Storage Temperature Range -55 to 150 RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 22mΩ @VGS = -10V -8A ID -30V Continuous Drain Current Pulsed Drain Current1 -30Avalanche Current EASAvalanche Energy L = 0.1mH SYMBOL VDS LIMITS IAS RqJA SYMBOL PD TJ, TSTG TA = 25 ° C MAXIMUM Power Dissipation TA = 70 ° C THERMAL RESISTANCE Ver 1.0 1 2012/4/13

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -30 -1.0 -1.5 -3 ± 100 nA -10 29 34 20 22 20 S 1480 334 231 2.9 Ω -2 A -1 V 40 nS 26 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. mAVDS = -20V, VGS = 0V , TJ = 125 ° C VDS = VGS, ID = -250mA VDS = 0V, VGS = ± 25V Reverse Transfer Capacitance VGS = 0V, VDS = -15V, f = 1MHz gfs Gate Threshold Voltage DYNAMIC V IGSS pF VDS = -24V, VGS = 0V Input Capacitance Ciss Coss Crss Qgd Qgs nC VGS(th) Forward Transconductance1 VGS = 0V, ID = -250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage IDSS Reverse Recovery Charge Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = -9A, VGS = 0V trr STATIC LIMITS UNITPARAMETER Fall Time2 SYMBOL Qg(VGS=- 4.5V) Qg(VGS=-10V) VDS = 0.5V(BR)DSS, VGS = -10V, ID = -9A Drain-Source Breakdown Voltage TEST CONDITIONS Output Capacitance Gate-Drain Charge2 Gate-Source Charge2 VGS = -4.5V, ID = -7A VDS = -5V, ID = -9A IF = -9A, dlF/dt = 100A / mS nSVDS = -15V, ID @ -9A, VGS = -10V, RGS = 6Ω td(on) tr td(off) tf VSD IS Qrr Forward Voltage1 Reverse Recovery Time mΩDrain-Source On-State Resistance1 RDS(ON) VGS = -10V, ID = -9A Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Total Gate Charge2 Ver 1.0 2 2012/4/13

P-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/4/13

P-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/4/13

P-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/13