P2003EVG

P2003EVG UNIKC | Alldatasheet

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P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP- 08 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Avalanche Energy L = 0.1mH TA = 25 ° C TA = 70 ° C Power Dissipation MAXIMUM -27Avalanche Current IAS EAS Operating Junction & Storage Temperature Range PD TJ, TSTG TYPICAL ID -30V Continuous Drain Current TA = 25 ° C 20mΩ @VGS = -10V Pulsed Drain Current1 -9A 1.6 2.5 RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage ID IDM SYMBOL °C-55 to 150 ° C / WRqJAJunction-to-Ambient VGS VDS SYMBOL Junction-to-Case UNITS -50 ± 25 -30 LIMITS V A mJ W THERMAL RESISTANCE RqJC REV 1.1 1 2015/3/30

P-Channel Logic Level Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -30 -1 -1.5 -3 ± 100 nA -10 50 A 25 35 15 20 24 S 1610 410 200 3.7 Ω 31.4 4.5 8.2 5.7 -2.1 A -1.2 V 16 nS 7 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Diode Reverse Recovery Time Diode Reverse Recovery Charge trr Qrr IF= 2A, dI/dt=100A/ms mΩDrain-Source On-State Resistance1 VGS = -10V, ID = -9ARDS(ON) VGS = -4.5V, ID = -7A V VDS = -24V, VGS = 0V On-State Drain Current1 ID(ON) VDS = -5V, VGS = -10V Forward Voltage1 VSD IF = -1A, VGS = 0V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS Turn-On Delay Time2 td(on) VDS = -15V, ID @ -1A, VGS = -10V,RL = 1Ω,RGS = 6Ω nSRise Time2 tr Turn-Off Delay Time2 td(off) Fall Time2 tf Total Gate Charge2 Qg VDS = 0.5V(BR)DSS, ID = -9A, VGS = -10V nCGate-Source Charge2 Qgs Gate-Drain Charge2 Qgd DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -15V, f = 1MHz pFOutput Capacitance Coss Reverse Transfer Capacitance Crss Forward Transconductance1 gfs VDS = -10V, ID = -9A TEST CONDITIONS STATIC LIMITS UNITS VGS = 0V, ID = -250mAV(BR)DSS Gate-Body Leakage Gate Threshold Voltage Drain-Source Breakdown Voltage VGS(th) PARAMETER SYMBOL IDSS VDS = -20V, VGS = 0V , TJ = 125 ° C VDS = VGS, ID = -250mA VDS = 0V, VGS = ± 25V Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Zero Gate Voltage Drain Current mA IGSS REV 1.1 2 2015/3/30

P-Channel Logic Level Enhancement Mode MOSFET REV 1.1 3 2015/3/30

P-Channel Logic Level Enhancement Mode MOSFET REV 1.1 4 2015/3/30

P-Channel Logic Level Enhancement Mode MOSFET REV 1.1 5 2015/3/30