P2003BVG UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% Rg tested 100% UIS tested SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. IAS MAXIMUM Junction-to-Ambient 50 SYMBOL ± 25 IDM SYMBOL LIMITS A VGS VDS 18.5 ID W UNITS 17 mJ 1.6 30Drain-Source Voltage TA= 25 ° C ID TA = 25 ° C 30V Continuous Drain Current TA = 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 20mΩ @VGS = 10V 9A Gate-Source Voltage EAS THERMAL RESISTANCE Avalanche Energy TYPICAL TA =70 ° C Junction & Storage Temperature Range -55 to 150 Pulsed Drain Current1 Avalanche Current PD RqJA Power Dissipation Tj, Tstg 2.5 V L =0.1mH REV 1.1 1 2015/11/11

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1 1.7 2.5 ± 100 nA 32 A 26 31 18.4 20 16 S 524 132 2.2 Ω 9.7 4.5 1.5 2.3 2.5 A 1 V 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. DYNAMIC Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance VDS = 0V, VGS = ± 25V IDSS Coss Crss VDS = 24V, VGS = 0V VGS = 0V, VDS = 15V, f = 1MHz Qg(VGS=4.5V) Rg pF nC Qgs STATIC Drain-Source Breakdown Voltage V VSD IF = 8A, VGS = 0V nSVDD = 15V,ID @ 1A, VGEN = 10V, RG = 0.2Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr Continuous Current Forward Voltage1 IS td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS VGS = 10V, ID = 8A Drain-Source On-State Resistance1 RDS(ON) LIMITS Qgd Output Capacitance Qg(VGS=10V) Forward Transconductance1 Ciss VDS = 15V, ID = 8A Input Capacitance gfs Total Gate Charge2 Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz VDS = 15V , ID =8A VDS = 20V, VGS = 0V, TJ = 55 ° C PARAMETER mΩ VGS = 4.5V, ID = 6A SYMBOL UNITS Zero Gate Voltage Drain Current VGS = 0V, ID = 250mA mA On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V Gate-Body Leakage VGS(th) IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA REV 1.1 2 2015/11/11

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.1 6 2015/11/11

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2015/11/11