P1665ZTF UNIKC | Alldatasheet

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N-Channel High Voltage Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150° C. 3VDD = 50V, L = 40mH, starting TJ = 25° C V Avalanche Current3 IAS 4 ° C / W RqJC RqJA ID IDM SYMBOL LIMITS ± 30 A VGS W UNITS Pulsed Drain Current1 Drain-Source Voltage VDS 650 RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 225mΩ @VGS = 10V 16A ID TC = 25 ° C 650V Continuous Drain Current2 °C-55 to 150 mJ 2.6 62.5 SYMBOL 320 MAXIMUM Junction-to-Case THERMAL RESISTANCE TYPICAL Junction-to-Ambient Power Dissipation TJ, TSTG EAS PD TC = 25 ° C TC = 100 ° C Operating Junction & Storage Temperature Range Avalanche Energy3 REV 1.0 1 2017/2/13

N-Channel High Voltage Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 650 2 3.2 4 ± 100 nA 100 175 225 mΩ 13 S 1762 1386 9.3 110 16 A 1.5 V 358 nS 5.4 uC 1Pulse test : Pulse Width  380 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. 4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. IF = 8A, dlF/dt = 100A / mS STATIC LIMITS UNITS Co(er) VGS = 0V, VDS = 0 to 520V pF DYNAMIC V gfs VDS = 650V, VGS = 0V, TC = 25 ° C Gate Threshold Voltage IDSS RDS(ON) VDS = 520V, VGS = 0V , TC = 100 ° C VDS = 0V, VGS = ± 30V Drain-Source On-State Resistance1 IGSS mA VDS = VGS, ID = 250mA Qg VDD = 520V, VGS = 10V, ID = 8A Ciss Coss Crss Qgd Qgs VGS = 0V, VDS = 25V, f = 1MHz nC Drain-Source Breakdown Voltage VGS = 10V, ID = 8A VDS = 10V, ID = 8A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Gate Voltage Drain Current Gate-Body Leakage Input Capacitance Output Capacitance Gate-Drain Charge2 Total Gate Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Effective Output Capacitance4 QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 8A, VGS = 0V nSVDD = 325V, ID = 8A, RG= 10Ω, VGS = 10V td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 PARAMETER SYMBOL TEST CONDITIONS REV 1.0 2 2017/2/13

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N-Channel High Voltage Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) REV 1.0 7 2017/2/13

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N-Channel High Voltage Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 9 2017/2/13