P1650GTF UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed 3VDD = 50V , L = 10mH, starting TJ = 25˚C Drain-Source Voltage VDS Continuous Drain Current2 Operating Junction & Storage Temperature Range Pulsed Drain Current1,2 Avalanche Current3 TC = 25 ° C TC = 100 ° C 500V RqJC RqJA 2.2 62.5 TC = 25 ° C Tj, Tstg RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 360mΩ @VGS = 10V 16A ID SYMBOLTHERMAL RESISTANCE TYPICAL Power Dissipation Junction-to-Ambient A mJ 500 V 9IAS 410EAS UNITS ID IDM VGS SYMBOL ± 30 LIMITS PD 22.7 56.8 W Junction-to-Case Avalanche Energy3 -55 to 150 MAXIMUM ° C / W REV 1.0 1 2017/1/19

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 500 2 2.7 4 ± 100 nA 100 296 360 mΩ 16 S 2707 236 180 130 100 16 A 1 V 376 nS 5.2 uC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. STATIC LIMITS UNITSPARAMETER Turn-On Delay Time2 Turn-Off Delay Time2 Fall Time2 Rise Time2 IF = 16A, VGS = 0V nSVDD = 250V, ID @ 16A, RG = 25Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr Gate-Source Charge2 Reverse Transfer Capacitance VDS = 10V, ID = 8A Qgd Input Capacitance Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz Forward Transconductance1 Qg Qgs gfs DYNAMIC VGS = 10V, ID = 8A mA VDD = 400V,VGS = 10V, ID = 16A nC Coss Crss Gate-Drain Charge2 SYMBOL Zero Gate Voltage Drain Current Gate-Body Leakage TEST CONDITIONS VDS = 400V, VGS = 0V , TC = 100 ° C V(BR)DSS VGS = 0V, ID = 250mA IF = 16A , dIF/dt= 100A/ms Gate Threshold Voltage Drain-Source Breakdown Voltage VGS(th) Drain-Source On-State Resistance1 VDS = 500V, VGS = 0V , TC = 25 ° C RDS(ON) VDS = 0V, VGS = ± 30V Ciss Total Gate Charge2 pF IGSS IDSS VVDS = VGS, ID = 250mA REV 1.0 2 2017/1/19

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/19

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/19

N-Channel Enhancement Mode MOSFET *因各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/1/19

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) REV 1.0 6 2017/1/19

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/19

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/19