P1615ATFA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Drain-Source Voltage VDS 150 V TC = 25 ° C TC = 100 ° C Junction-to-Ambient Junction & Storage Temperature Range SYMBOLTHERMAL RESISTANCE TYPICAL Power Dissipation TC = 25 ° C 150V Continuous Drain Current RqJC RqJA 1.7 RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 16.5mΩ @VGS = 10V 42A ID 62.5 mJ 458 W UNITS 150 ID IDM SYMBOL ± 25 LIMITS A Tj, Tstg EASL = 1mH Avalanche Energy PD ° C / W VGS Pulsed Drain Current1 Avalanche Current Junction-to-Case IAS -55 to 150 MAXIMUM REV 1.0 1 2017/1/19

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 150 2.5 3.5 4.5 ± 100 nA 13.5 18.5 12.5 16.5 37 S 3426 523 198 1.3 Ω 42 A 1.2 V 83 nS 236 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Qg TEST CONDITIONS STATIC LIMITS UNITSPARAMETER Rise Time2 Turn-Off Delay Time2 Fall Time2 IF = 20A, VGS = 0V nSVDS = 75V, ID @ 20A, VGS = 10V, RGEN = 6Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 VGS = 0V, VDS = 25V, f = 1MHz Forward Transconductance1 QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr Coss Crss Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance VGS = 10V, ID = 20A VDS = 10V, ID = 20A Qgd Input Capacitance Output Capacitance SYMBOL Zero Gate Voltage Drain Current Gate-Body Leakage Qgs gfs DYNAMIC VGS = 7V, ID = 20A mA VDS = 75V,VGS = 10V, ID = 20A nC V(BR)DSS VGS = 0V, ID = 250mA pF VDS = 120V, VGS = 0V IGSS IDSS VDS = 0V, VGS = ± 25V Ciss VVDS = VGS, ID = 250mA VDS = 100V, VGS = 0V , TJ = 125 ° C Total Gate Charge2 IF = 20A , dIF/dt= 100A/ms Gate Threshold Voltage Drain-Source Breakdown Voltage VGS(th) Drain-Source On-State Resistance1 RDS(ON) mΩ Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz REV 1.0 2 2017/1/19

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/19

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/19

N-Channel Enhancement Mode MOSFET *因各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/1/19

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) REV 1.0 6 2017/1/19

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/19

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/19