P1615ATA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 150 V TC = 100 ° C Junction & Storage Temperature Range SYMBOL Power Dissipation Avalanche Energy L = 1mH TJ, TSTG MAXIMUM Junction-to-Case THERMAL RESISTANCE 62.5 ° C / W PD TC = 25 ° C RqJC 0.65 TYPICAL 68A ID TC = 25 ° C 150V Continuous Drain Current EAS Drain-Source Voltage VDS RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 16.5mΩ @VGS = 10V mJ 192 435 W -55 to 150 °C UNITS 270 ID IDM SYMBOL LIMITS A ± 25VGS Pulsed Drain Current1 Avalanche Current IAS 30 Junction-to-Ambient RqJA REV 1.0 1 2017/1/13

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 150 2.5 3.5 4.5 ± 100 nA 14 18.5 13 16.5 34 S 3452 530 209 1.4 Ω 68 A 1.2 V 80 nS 225 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. RDS(ON) VGS = 7V, ID = 20A mΩ pF VGS = 10V, ID = 20A Zero Gate Voltage Drain Current STATIC IGSS UNITSTEST CONDITIONS Rise Time2 Turn-Off Delay Time2 Fall Time2 VDS = 75V, ID = 20A, VGS = 10V Total Gate Charge2 IF = 20A, VGS = 0V nSVDS = 75V, ID @ 20A, VGS = 10V, RGEN =6Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance nC Drain-Source Breakdown Voltage VDS = 10V, ID = 20A VGS(th) Forward Transconductance1 Qg Gate-Drain Charge2 Qgd VGS = 0V, VDS = 0V, f = 1MHz VVDS = VGS, ID = 250mA VGS = 0V, ID = 250mAV(BR)DSS Qgs Ciss Coss Rg Crss LIMITS IF = 20A, dls/dt = 100A / mS IDSS VDS = 0V, VGS = ± 25V gfs DYNAMIC mA Output Capacitance VDS = 100V, VGS = 0V, TJ = 125 ° C Gate-Body Leakage VDS = 120V, VGS = 0V SYMBOL Input Capacitance Gate Threshold Voltage PARAMETER VGS = 0V, VDS = 25V, f = 1MHz Drain-Source On-State Resistance1 REV 1.0 2 2017/1/13

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/13

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube REV 1.0 6 2017/1/13

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/13