P1610ATF UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3Not suggest using Self-Tapping screw. ° C / W W SYMBOL 0.49 Junction-to-Case IDM VGS SYMBOL ± 20 -55 to 150 LIMITS EAS PD A mJ V UNITS 120 THERMAL RESISTANCE TYPICAL Power Dissipation 48 MAXIMUM L = 1mHAvalanche Energy Machine ScrewMounting Torque3 RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 16mΩ @VGS = 10V 34A ID IAS ID 110V RqJC RqJA 2.6 62.5 Continuous Drain Current2 Operating Junction & Storage Temperature Range Pulsed Drain Current1,2 Avalanche Current TC = 25 ° C TC = 100 ° C TC = 25 ° C Kgf.cm N.m Tj, Tstg Junction-to-Ambient REV 1.0 1 2017/1/22

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 110 2 3.2 4 ± 100 nA 13.5 21 12.5 16 80 S 3009 258 152 0.81 Ω 15.8 36 A 1.2 V 37 nS 50 uC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. IDSS VVDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V VGS = 0V, ID = 250mA IF = 20A , dIF/dt= 100A/ms Gate Threshold Voltage Drain-Source Breakdown Voltage VGS(th) VDS = 88V, VGS = 0V V(BR)DSS Ciss SYMBOL gfs DYNAMIC VGS = 7V, ID = 15A mA VDS = 10V, ID = 20A Zero Gate Voltage Drain Current Gate-Body Leakage TEST CONDITIONS IGSS nC Coss Crss Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Qgd VGS = 0V, VDS = 0V, f = 1MHz pF Input Capacitance Output Capacitance VGS = 0V, VDS = 25V, f = 1MHz Forward Transconductance1 Qg Qgs Total Gate Charge2 Gate Resistance Rg VDS = 55V, ID = 20A, VGS = 10V QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr Rise Time2 IF = 20A, VGS = 0V nSVDD = 55V, ID @ 20A, VGS = 10V,RGEN = 6Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 Turn-Off Delay Time2 Fall Time2 LIMITS UNITSPARAMETER Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 20A mΩ VDS = 80V, VGS = 0V, TJ = 125 ° C STATIC REV 1.0 2 2017/1/22

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/22

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/22

N-Channel Enhancement Mode MOSFET *因各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/1/22

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) REV 1.0 6 2017/1/22

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/22

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/22