P1610AT UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. THERMAL RESISTANCE TYPICAL Junction-to-Ambient RqJA ± 20VGS Pulsed Drain Current1,2 Avalanche Current IAS 12 -55 to 150 MAXIMUM Junction-to-Case UNITS 150 ID IDM SYMBOL LIMITS A V mJ W Avalanche Energy RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 16mΩ @VGS = 10V 51A ID TC = 25 ° C 110V Continuous Drain Current2 TJ, TSTG EASL = 1mH PD TC = 25 ° C RqJC 1.3 62.5 ° C / W TC = 100 ° C Operating Junction & Storage Temperature Range SYMBOL Power Dissipation REV 1.0 1 2015/8/28

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 110 2 3.2 4 ± 100 nA 14 21 13 16 80 S 3009 258 152 0.81 Ω 15.8 51 A 1.2 V 37 nS 50 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. VDS = 80V, VGS = 0V , TJ = 125 ° C SYMBOL Input Capacitance pF VDS = 88V, VGS = 0V IGSS IDSS VDS = 0V, VGS = ± 20V gfs DYNAMIC IF = 20A, dlF/dt = 100A / mS Qgs VGS = 0V, VDS = 25V, f = 1MHz Rg mA Gate Threshold Voltage VVDS = VGS, ID = 250mA VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current Gate-Body Leakage Qg VDS = 55V, VGS = 10V, ID = 20A Ciss Coss Crss Qgd VGS = 0V, VDS = 0V, f = 1MHz Total Gate Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance nC Drain-Source Breakdown Voltage VGS = 10V, ID = 20A VDS = 10V, ID = 20A VGS(th) Forward Transconductance1 QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr Output Capacitance IF = 20A, VGS = 0V nSVDD = 55V, ID @ 20A, VGS = 10V, RGEN = 6Ω td(on) tr td(off) tf Gate-Drain Charge2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 UNITSPARAMETER TEST CONDITIONS mΩDrain-Source On-State Resistance1 RDS(ON) VGS = 7V, ID = 15A STATIC LIMITS REV 1.0 2 2015/8/28

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube REV 1.0 6 2015/8/28

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2015/8/28