P1610AK UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 25A. 4The Power dissipation is based on RqJA t ≦10s value. Pulsed Drain Current1 W Junction-to-Case VGSGate-Source Voltage t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 Steady-State RqJA A V 2.5 ° C / W ± 20 IDM SYMBOL Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 IAS 13.5 RqJC UNITS 100 TYPICAL VDS 110 V ID LIMITS TC = 25 ° C Avalanche Energy L = 1mH RDS(ON) Drain-Source Voltage 16mΩ @VGS = 10V 36A ID TC = 25 ° C TA = 70 ° C 110V Continuous Drain Current3 TC = 100 ° C PARAMETERS/TEST CONDITIONS THERMAL RESISTANCE TC = 100 ° CPower Dissipation TJ, Tstg PD Steady-State 2.8 Continuous Drain Current TA = 25 ° C mJ RqJA PD W ID Avalanche Current EAS MAXIMUM TA= 70 ° C 8.8 Power Dissipation4 TA = 25 ° C 4.4 REV 1.0 1 2017/2/10

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 110 2 3 4 ± 100 nA 14 21 13 16 45 S 3017 255 152 1 Ω VGS =10V 58 VGS = 7V 44 16.5 21.5 41 A 1.2 V 36 nS 41 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 25A. VGS = 7V, ID = 11A V IF = 11A, dlF/dt = 100A / mS RDS(ON) SYMBOL V(BR)DSS TEST CONDITIONS UNITS Coss VDS = 0V, VGS = ± 20V gfs STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 88V, VGS = 0V pF IDSS QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD Forward Transconductance1 trr IF = 11A, VGS = 0V nSVDS = 55V, ID @ 11A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate Resistance VDS = 5V, ID = 11A QgTotal Gate Charge2 Ciss PARAMETER Output Capacitance Drain-Source Breakdown Voltage VGS = 10V , ID = 11A VDS = 80V, VGS = 0V, TJ = 55 ° C Qgd Crss Input Capacitance VGS = 0V, VDS = 25V, f = 1MHz VDS = 55V, VGS = 10V, ID = 11A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate-Body Leakage VGS(th) LIMITS REV 1.0 2 2017/2/10

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/2/10

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/2/10

N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/2/10

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2017/2/10

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/2/10

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/2/10