P1610AD

P1610AD UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2Starting Tj =25 ° C,L=1mH,VDD=50V A -55 to 150 Drain-Source Voltage VDS 110 V Avalanche Energy2 93 UNITSSYMBOL LIMITS VGS IAS 13.7 ± 20 TYPICAL PD MAXIMUM IDM ID Power Dissipation 83 RqJC Tj, Tstg Gate-Source Voltage TC= 25 ° C ID TC= 25 ° C 110V Continuous Drain Current TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 16mΩ @VGS = 10V 45A THERMAL RESISTANCE TC= 100° C Junction & Storage Temperature Range SYMBOL W Pulsed Drain Current1 Avalanche Current 1.5Junction-to-Case mJEAS REV 1.0 1 2014/7/25

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 110 2 3.5 4 ± 100 nA 14 21 13 16 63 S 3017 255 152 16.5 21.5 45 A 1.2 V 37 nS 48 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Gate-Drain Charge2 VDS =10V, ID = 20A Qg IDSS VGS(th) VDS = 80V, VGS = 0V VDS = 0V, VGS = ± 20V Output Capacitance Coss Crss CissInput Capacitance Forward Transconductance1 Reverse Transfer Capacitance LIMITS QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time Gate-Source Charge2 Qgs DYNAMIC VDS =80V, VGS = 0V, TJ = 125° C VGS = 7V, ID =15A PARAMETER STATIC nC Total Gate Charge2 tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IS Qgd td(off) VDS = 55V, VGS = 10V, ID = 20A nS Turn-On Delay Time2 Rise Time2 Fall Time2 Turn-Off Delay Time2 tr trr VSD VDD = 55V ,ID≌ 20A, VGS = 10V, RGS =6Ω td(on) IF = 20A, VGS = 0V Drain-Source On-State Resistance1 gfs VGS = 0V, VDS = 25V, f = 1MHz pF Gate-Body Leakage mΩ VDS = VGS, ID = 250mA RDS(ON) V UNITSSYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage IF = 20A, dlF/dt = 100A /ms mA VGS =10V, ID =20A VGS = 0V, ID = 250mAV(BR)DSS REV 1.0 2 2014/7/25

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/7/25

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/7/25

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/7/25