P1603BEX UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. 3Package limitation current is 18A. PD 6Power Dissipation TJ, Tstg W Avalanche Energy IAS EAS 20.5 A mJ TC = 25 ° C TC = 100 ° C V 1.7 MAXIMUM ID ± 20 Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 UNITS TYPICAL VDS 30 V SYMBOL IDM VGS LIMITS Junction-to-Ambient2 THERMAL RESISTANCE ID TA = 25 ° C 30V PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 16mΩ @VGS = 10V 24A Gate-Source Voltage Continuous Drain Current3 6.3 RqJA 8 ° C / W Pulsed Drain Current1 TA = 70 ° C TA= 70 ° C Avalanche Current L = 0.1mH RqJC TA = 25 ° C Junction-to-Case TC = 25 ° C TC = 100 ° C REV 1.0 1 2016/5/17
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1 1.5 2.5 ± 100 nA 16.4 25 13.3 16 37 S 513 2.6 Ω 7.2 1.2 15 A 0.8 1 V 11.3 nS 2.5 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 18A. Drain-Source Breakdown Voltage V Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage IF = 8A, dlF/dt = 100A / mS UNITS Coss VGS = 4.5V, ID = 8A VGS = 0V, VDS = 15V, f = 1MHz VDS = 10V, ID = 8A VDS = 0V, VGS = ± 20V gfs RDS(ON) LIMITS VGS = 10V, ID = 8A V(BR)DSS VGS(th) TEST CONDITIONS nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V pF IDSS Forward Transconductance1 QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 8A, VGS = 0V nSVDD= 15V, ID @ 8A, VGEN = 10V, RG= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg VDS = 15V , ID = 8A Input Capacitance Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Total Gate Charge2 Qg(VGS= 10V) Qg(VGS= 4.5V) Crss Qgd PARAMETER Output Capacitance VDS = 20V, VGS = 0V, TJ = 55 ° C SYMBOL STATIC Ciss REV 1.0 2 2016/5/17
N-Channel Enhancement Mode MOSFET REV 1.0 3 2016/5/17
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N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：B4) B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2016/5/17
N-Channel Enhancement Mode MOSFET REV 1.0 7 2016/5/17
N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2016/5/17