P1603BEBB

P1603BEBB UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. 3Package limitation current is 18A. Avalanche Energy L = 0.1 mH 1.8 °C-55 to 150 MAXIMUM Junction-to-Ambient2 SYMBOL LIMITS A VGS VDS 8.2 UNITS 6.6 21 mJ 1.1 ± 20 V TA= 25 ° C Tj, Tstg 16mΩ @VGS = 10V 24A Drain-Source Voltage ID TC = 25 ° C 30V Continuous Drain Current3 TA= 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Operating Junction & Storage Temperature Range SYMBOL Pulsed Drain Current1 Avalanche Current IAS 20.5 EAS THERMAL RESISTANCE TYPICAL IDM Gate-Source Voltage ID TC = 100 ° C TA = 25 ° C TA= 70° C Power Dissipation W TC = 25 ° C TC = 100 ° C PD 6.2 Junction-to-Case RqJC 8 ° C / W RqJA REV 1.1 1 2014/7/22

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1 1.4 2.5 ± 100 nA 70 A 16.2 25 13.4 16 30 S 516 2.6 Ω 13.4 7.4 1.6 3.3 24 A 1 V 11.4 nS 2.7 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 18A. Drain-Source On-State Resistance1 RDS(ON) VGS =10V, ID = 8A IF = 8A, dlF/dt = 100A / μS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS VGS = 0V, ID = 250mA Rg IS VDS =24V, VGS = 0V STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = 15V, f = 1MHz mΩ mA DYNAMIC QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time nSVDD = 15V ID @ 8A, VGEN = 10V, RG = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr nCQgs TEST CONDITIONS VSD trr IF = 8A, VGS = 0V pF td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS PARAMETER VDS = 15V , ID = 8A Output Capacitance Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Ciss VDS =10V, ID = 8A Input Capacitance Qgd gfs Qg(VGS=10V) SYMBOL Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz Total Gate Charge2 Qg(VGS=4.5V) Gate-Body Leakage VGS(th) Forward Transconductance1 VDS =20V, VGS = 0V, TJ = 125° C VGS = 4.5V, ID = 6.8A On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V UNITS REV 1.1 2 2014/7/22

N-Channel Enhancement Mode MOSFET REV 1.1 3 2014/7/22

N-Channel Enhancement Mode MOSFET REV 1.1 4 2014/7/22

N-Channel Enhancement Mode MOSFET REV 1.1 5 2014/7/22