P1603BEB UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. 3Package limitation current is 12A. 7.6 ° C / W Power Dissipation TC = 25 ° C TC = 100 ° C PD TC = 100 ° C A ID Pulsed Drain Current1 Avalanche Current IAS IDM Junction-to-Ambient2 Operating Junction & Storage Temperature Range SYMBOL Continuous Drain Current3 TC = 25 ° C TA= 70° C EAS THERMAL RESISTANCE TYPICAL MAXIMUM W RqJA Junction-to-Case RqJC ID TA = 25 ° C 30V TA= 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 16mΩ @VGS = 10V 21A Drain-Source Voltage Gate-Source Voltage Tj, Tstg 16 mJ 1.2 ± 20 V SYMBOL LIMITS VGS VDS UNITS Avalanche Energy L = 0.1 mH °C-55 to 150 TA= 25 ° C REV 1.1 1 2014/7/22

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1 1.7 2.5 ± 100 nA 55 A 22 25 13 16 35 S 560 130 1.5 Ω 2.1 3.5 21 A 1 V 24 nS 29 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 12A. VGS = 0V, VDS = 0V, f = 1MHz SYMBOL V On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V UNITS VGS(th) Forward Transconductance1 VDS =20V, VGS = 0V, TJ = 125° C VGS = 4.5V, ID = 5A VGS = 0V, VDS = 15V, f = 1MHzOutput Capacitance Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA STATIC Drain-Source Breakdown Voltage Gate-Body Leakage Ciss VDS =10V, ID = 7A Input Capacitance Qgd VDS = 0.5V(BR)DSS, ID = 7A DYNAMIC Total Gate Charge2 Qg(VGS=4.5V) Qg(VGS=10V) Gate Resistance PARAMETER V(BR)DSS IF = 7A, VGS = 0V pF Rise Time2 Turn-Off Delay Time2 Fall Time2 gfs Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Forward Voltage1 Reverse Recovery Time nSVDD = 15V ID @ 7A, VGEN = 10V, RG = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 mΩ mA IF = 7A, dlF/dt = 100A / μS VDS = 0V, VGS = ± 20V IDSS Coss Crss Qrr Qgs VSD trr Reverse Recovery Charge VGS = 0V, ID = 250mA Rg IS VDS =24V, VGS = 0V Drain-Source On-State Resistance1 RDS(ON) VGS =10V, ID = 7A Continuous Current3 LIMITS nC TEST CONDITIONS REV 1.1 2 2014/7/22

N-Channel Enhancement Mode MOSFET REV 1.1 3 2014/7/22