P1410BK UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value. ID Avalanche Current EAS MAXIMUM TA= 70 ° C 9.8 Power Dissipation3 TA = 25 ° C 5 Continuous Drain Current TA = 25 ° C mJ RqJA PD W3.2 TC = 100 ° CPower Dissipation TJ, Tstg PD Steady-State 100V Continuous Drain Current TC = 100 ° C PARAMETERS/TEST CONDITIONS THERMAL RESISTANCE RDS(ON) Drain-Source Voltage 14.5mΩ @VGS = 10V 42A ID TC = 25 ° C TA = 70 ° C Avalanche Energy L = 1mH TC = 25 ° C UNITS 110 TYPICAL VDS 100 V ID LIMITS 224 °C-55 to 150 IAS 21 RqJC ± 20 IDM SYMBOL Operating Junction & Storage Temperature Range SYMBOL A V 2.1 ° C / W Pulsed Drain Current1 W Junction-to-Case VGSGate-Source Voltage t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 Steady-State RqJA REV 1.0 1 2017/2/10

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2.3 ± 100 nA 12 16 11 14.5 50 S 4032 276 224 0.67 Ω VGS =10V 106 VGS =4.5V 56 132 50 A 1.2 V 40 nS 53 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Gate-Body Leakage VGS(th) LIMITS Qgd Crss Input Capacitance VGS = 0V, VDS = 25V, f = 1MHz VDS = 50V, VGS = 10V, ID = 20A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance PARAMETER Output Capacitance Drain-Source Breakdown Voltage VGS = 10V , ID = 20A VDS = 80V, VGS = 0V, TJ = 55 ° C Gate Resistance VDS = 5V, ID = 20A QgTotal Gate Charge2 Ciss IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg Zero Gate Voltage Drain Current trr IF = 20A, VGS = 0V nSVDS = 50V, ID @ 20A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf pF IDSS QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD Forward Transconductance1 STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 80V, VGS = 0V UNITS Coss VDS = 0V, VGS = ± 20V gfs IF = 20A, dlF/dt = 100A / mS RDS(ON) SYMBOL V(BR)DSS TEST CONDITIONS VGS = 4.5V, ID = 15A V REV 1.0 2 2017/2/10

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/2/10

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/2/10

N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/2/10

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2017/2/10

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/2/10

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/2/10