P1410BI UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. SYMBOL VGS mJ V 1.5 LIMITS UNITS VDS 100 ID IAS IDM TJ, TSTG 62.5 ° C / W Avalanche Energy2 L = 1mH Power Dissipation EAS 33TC = 100 ° C PD A Junction-to-Ambient RqJA 83TC = 25 ° C RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage ID Continuous Drain Current TC = 25 ° C 100V Pulsed Drain Current1 14.5mΩ @VGS = 10V 49A Drain-Source Voltage ± 20 TYPICAL °C-55 to 150Junction & Storage Temperature Range SYMBOL MAXIMUM RqJCJunction-to-Case THERMAL RESISTANCE 198 20Avalanche Current W REV 1.0 1 2017/2/17
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2.3 ± 100 nA 12 16 11.5 14.5 48 S 4026 270 220 102 147 69 A 1.2 V 38 nS 46 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. VGS = 10V, ID = 20A VGS = 0V, VDS = 25V, f = 1MHz pF Ciss Coss Input Capacitance DYNAMIC Crss Qg(VGS=10V) VDS = 50V , ID = 20A Gate-Source Charge2 Gate-Drain Charge2 Reverse Transfer Capacitance Qgd Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A mΩ Drain-Source Breakdown Voltage VGS = 0V, ID = 250mAV(BR)DSS TEST CONDITIONS IGSS IDSS Gate-Body Leakage VDS = 80V, VGS = 0V , TJ = 125 ° CZero Gate Voltage Drain Current VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V Gate Threshold Voltage VGS(th) gfs VDS = 80V, VGS = 0V V STATIC LIMITS UNITSPARAMETER SYMBOL mA trr Qrr IS VSD IF = 20A, dlF/dt = 100A / mS Reverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = 20A, VGS = 0V nS Qgs nC VDS = 5V, ID = 20AForward Transconductance1 Output Capacitance Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 td(on) tr td(off) tf VDD = 50V ,ID @ 20A, VGS = 10V, RGS = 6Ω Total Gate Charge2 Qg(VGS=4.5V) REV 1.0 2 2017/2/17
N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/2/17
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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:75pcs/Tube REV 1.0 6 2017/2/17
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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/2/17