P1410BD UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Junction-to-Case RqJC EAS TC = 25 ° C 100 ± 20 THERMAL RESISTANCE TYPICAL PD Pulsed Drain Current1 Avalanche Current IAS LIMITS A VGS VDS V UNITS SYMBOL ID 14.5mΩ @VGS = 10V 49A Gate-Source Voltage Drain-Source Voltage 1.5 MAXIMUM ID TC = 25 ° C 100V Continuous Drain Current TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) TC = 100 ° C 197L = 1mH 62.5 SYMBOL °C-55 to 150Junction & Storage Temperature Range W IDM ° C / W mJ Junction-to-Ambient RqJA Avalanche Energy2 Power Dissipation Tj, Tstg REV 1.0 1 2017/2/9
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.3 1.8 2.3 ± 100 nA 12 16 11.5 14.5 47 S 4029 269 219 103 145 69 A 1.2 V 37 nS 43 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. VDS = 5V, ID = 20Agfs VDD = 50V ID @ 20A, VGS = 10V, RGS =6Ω Forward Voltage1 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nC nS td(on) mA DYNAMIC Input Capacitance Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Qgd Output Capacitance Qg(VGS=10V) Drain-Source Breakdown Voltage V PARAMETER SYMBOL STATIC Reverse Recovery Time IF = 20A, VGS = 0V IS VSD trr IF = 20A, dlF/dt = 100A / mSQrrReverse Recovery Charge Continuous Current tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 VGS(th) Ciss IDSS Coss Crss tr td(off) VDS = 0V, VGS = ± 20V VDS = 80V, VGS = 0V VDS = 50V , ID = 20AQgs LIMITS VGS = 0V, VDS = 25V, f = 1MHz VDS = VGS, ID = 250mA V(BR)DSS VGS = 0V, ID = 250mA TEST CONDITIONS UNITS mΩ pF Forward Transconductance1 VGS = 10V, ID = 20A VDS = 80V, VGS = 0V , TJ = 125 ° C Gate-Body Leakage Zero Gate Voltage Drain Current Total Gate Charge2 Qg(VGS=4.5V) Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A IGSS Gate Threshold Voltage REV 1.0 2 2017/2/9
N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/2/9
N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/2/9
N-Channel Enhancement Mode MOSFET *因为各家封装厂模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/2/9
N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2017/2/9
N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/2/9
N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/2/9