P1406BV UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value. RqJC Tj, Tstg SYMBOL ° C / W ID PD RqJA Pulsed Drain Current1 Avalanche Current Power Dissipation3 THERMAL RESISTANCE Avalanche Energy TYPICAL TA =70 ° C Junction & Storage Temperature Range L = 0.1mH PARAMETERS/TEST CONDITIONS RDS(ON) 12.5mΩ @VGS = 10V 12A Gate-Source Voltage EAS TA= 25 ° C ID TA = 25 ° C 60V Continuous Drain Current TA = 70 ° C Drain-Source Voltage 39IAS V W UNITS 76 mJ 2.6 IDM SYMBOL LIMITS A VVGS VDS ± 20 °C-55 to 150 MAXIMUM Junction-to-Case Steady-State Steady-State RqJA 56 Junction-to-Ambient2 t ≦10s Junction-to-Ambient REV 1.0 1 2017/1/11

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 11 16 9.8 12.5 50 S 1901 239 177 0.7 Ω 3 A 1.3 V 26 nS 17 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Drain-Source On-State Resistance1 RDS(ON) Zero Gate Voltage Drain Current IGSSGate-Body Leakage VGS(th) Drain-Source Breakdown Voltage V mΩ VGS = 4.5V, ID = 10A SYMBOL UNITS VGS = 10V, ID = 10A VGS = 0V, VDS = 0V, f = 1MHz Gate-Drain Charge2 VDS = 40V, VGS = 0V, TJ = 55 ° C PARAMETER Input Capacitance Qgd Output Capacitance Qg(VGS=10V) Forward Transconductance1 Gate Resistance Gate-Source Charge2 Total Gate Charge2 Qg(VGS=4.5V) Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS nSVDS = 30V, ID @ 10A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Diode Reverse Recovery Charge Continuous Current Forward Voltage1 Diode Reverse Recovery Time IS VSD trr IF = 10A, VGS = 0V Reverse Transfer Capacitance DYNAMIC Gate Threshold Voltage VDS = VGS, ID = 250mA LIMITS VGS = 0V, ID = 250mA VGS = 0V, VDS = 50V, f = 1MHz VDS = 48V, VGS = 0V gfs Ciss VDS = 5V, ID = 10A Qrr nC Qgs mA pF STATIC IF = 10A, dl/dt = 100A /mS VDS = 0V, VGS = ± 20V IDSS Coss Crss Rg VDS = 30V , ID = 10A REV 1.0 2 2017/1/11

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/11

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/11

N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/11

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2017/1/11

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/11

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/11