P1403CV UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1limited by maximum junction temperature. 2Limited by package. LIMITS V A mJ THERMAL RESISTANCE UNITS ± 12 Continuous Drain Current1 SYMBOL VGS ID IDM TA = 70 ° C TYPICAL 2.5 VDS TA = 25 ° C Junction & Storage Temperature Range RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage ID 14.6mΩ @VGS = 10V 11A30V Avalanche Energy L = 0.1mH Pulsed Drain Current2 TA = 25 ° C Power Dissipation °C-55 to 150 IAS EAS SYMBOL PD TJ, TSTG W RqJA MAXIMUM Avalanche Current Junction-to-Ambient Ver 1.0 1 2012/7/5
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.5 0.9 1.5 ± 100 nA 45 A 21.8 26.0 13.7 16.5 11.9 14.6 35 S 1290 210 125 1.55 Ω 7.5 1.9 A 1.3 V 13 nS 40 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. Zero Gate Voltage Drain Current Forward Transconductance1 gfs VDS = 5V, ID = 11A DYNAMIC Input Capacitance Ciss mAIDSS VDS = 20V, VGS = 0V , TJ = 55 ° C VGS = 0V, VDS = 15V, f = 1MHz pFOutput Capacitance Coss VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 12VGate-Body Leakage Gate Threshold Voltage Drain-Source Breakdown Voltage VGS(th) IGSS VGS = 0V, ID = 250mAV(BR)DSS LIMITS UNIT V VDS = 24V, VGS = 0V PARAMETER SYMBOL TEST CONDITIONS STATIC Reverse Transfer Capacitance Crss Qg(VGS=10V) Forward Voltage1 VSD Turn-On Delay Time2 td(on) SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS VDS = 0.5V(BR)DSS, ID = 11A nC Gate-Source Charge2 Qgs Gate-Drain Charge2 Qgd Qg(VGS=4.5V Total Gate Charge2 Reverse Recovery Time trr nSRise Time2 tr Turn-Off Delay Time2 td(off) Fall Time2 tf On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V Drain-Source On-State Resistance1 VGS = 10V, ID = 11A RDS(ON) VGS = 2.5V, ID = 8A VGS = 4.5V, ID = 10A Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz IF = 11A, dlF/dt = 100A / mS mΩ VDS = 10V, ID @ 11A, VGS = 10V, RGEN = 6Ω Reverse Recovery Charge Qrr IF = 11A, VGS = 0V Ver 1.0 2 2012/7/5
N-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/7/5
N-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/7/5
N-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/7/5