P1402CDG UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Duty cycle≤1% ° C / W110 V Avalanche Energy L = 0.1mH EAS PD TC = 25 ° C TC = 100 ° C Power Dissipation TJ, TSTG Junction-to-Ambient RqJA MAXIMUM Junction-to-Case THERMAL RESISTANCE TYPICAL RqJC 2.6 RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 14mΩ @VGS = 4.5V 45A ID TC = 25 ° C 20V Continuous Drain Current °C-55 to 175 mJ W UNITS 140 ID IDM SYMBOL LIMITS A ± 12VGS Pulsed Drain Current1 Avalanche Current IAS Operating Junction & Storage Temperature Range SYMBOL Rev 1.2 1 2015/5/28
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.45 0.63 1.25 ± 100 nA 140 A 12.5 28 9.3 14 7.9 12 26 S 1030 364 253 7.5 22 A 1.3 V 37 nS 43 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. SYMBOL Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 20A VGS = 0V, VDS = 10V, f = 1MHz Gate-Body Leakage Reverse Transfer Capacitance mΩ On-State Drain Current1 ID(ON) VDS = 5V, VGS = 4.5V STATIC LIMITS UNITSPARAMETER VGS = 4.5V, ID = 18A TEST CONDITIONS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 IF = IS, VGS = 0V nSVDS = 10V, ID @ 18A, VGS = 5V, RGS = 3.3Ω QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr Rise Time2 Turn-Off Delay Time2 Fall Time2 Input Capacitance Output Capacitance Gate-Drain Charge2 Total Gate Charge2 Gate-Source Charge2 nC Drain-Source Breakdown Voltage VGS = 2.5V, ID = 9A VDS = 10V, ID = 20A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current V VDS = 0.5V(BR)DSS, VGS = 5V, ID = 18A Ciss Coss Crss Qgd Qgs pF VDS = 16V, VGS = 0V IGSS IDSS VDS = 13.2V, VGS = 0V , TJ = 125 ° C VDS = 0V, VGS = ± 12V gfs mA DYNAMIC Gate Threshold Voltage VDS = VGS, ID = 250mA Qg Rev 1.2 2 2015/5/28
N-Channel Enhancement Mode MOSFET Rev 1.2 3 2015/5/28
N-Channel Enhancement Mode MOSFET Rev 1.2 4 2015/5/28
N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 Rev 1.2 5 2015/5/28