P1260ETF UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Ensure that the channel temperature does not exceed 150° C. 3VDD = 50V, L = 10mH, starting TJ = 25° C Drain-Source Voltage VDS 600 V Avalanche Current3 IAS 7.3 A VGS Pulsed Drain Current1 ° C / W RqJC RqJA UNITS 7.6 ID IDM SYMBOL LIMITS ± 30 °C-55 to 150 mJ 264 W 12A ID TC = 25 ° C 600V Continuous Drain Current2 2.6 62.5 SYMBOL RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 670mΩ @VGS = 10V TC = 100 ° C Operating Junction & Storage Temperature Range Avalanche Energy3 MAXIMUM Junction-to-Case THERMAL RESISTANCE TYPICAL Junction-to-Ambient Power Dissipation TJ, TSTG EAS PD TC = 25 ° C REV 1.0 1 2017/2/6

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 600 2 2.8 4 ± 100 nA 518 670 mΩ 15 S 2023 172 169 12 A 1 V 449 nS 6 uC 1Pulse test : Pulse Width  380 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. Gate Threshold Voltage IF = 12A, dlF/dt = 100A / mS STATIC LIMITS UNITS V gfs mA DYNAMIC VDS = 600V, VGS = 0V, TC = 25 ° C IGSS IDSS RDS(ON) VDS = 480V, VGS = 0V , TC = 100 ° C VDS = 0V, VGS = ± 30V Drain-Source On-State Resistance1 VDS = VGS, ID = 250mA Qg VDD =480V, VGS = 10V, ID = 12A Ciss Coss Crss Qgd Qgs VGS = 0V, VDS = 25V, f = 1MHz nC Drain-Source Breakdown Voltage VGS = 10V, ID = 6A VDS = 10V, ID = 6A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Gate Voltage Drain Current Gate-Body Leakage Input Capacitance Output Capacitance Gate-Drain Charge2 Total Gate Charge2 Gate-Source Charge2 Reverse Transfer Capacitance QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 12A, VGS = 0V nSVDD = 300V, ID = 12A, RG= 25Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 PARAMETER SYMBOL pF TEST CONDITIONS REV 1.0 2 2017/2/6

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N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:50pcs/Tube(2000pcs/Box) REV 1.0 7 2017/2/6

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 9 2017/2/6