P1260AT

P1260AT UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 60V, starting TJ = 25° C PD TC = 25 ° C TC = 100 ° C Junction-to-Case RqJC TJ, TSTG Drain-Source Voltage 600V Continuous Drain Current2 Power DissipationA Avalanche Energy3 L = 10mH TC = 25 ° C Avalanche Current3 RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 0.65Ω @VGS = 10V 12A ID 223 IAS V 0.56 MAXIMUMTYPICAL mJ SYMBOL LIMITS ± 30 VDS 600 ID 8.5 UNITS W °C-55 to 150 VGS Pulsed Drain Current1, 2 Operating Junction & Storage Temperature Range SYMBOL IDM 7.4 A Junction-to-Ambient RqJA 62.5 ° C / W EAS THERMAL RESISTANCE 277 Ver 1.0 1 2012/4/16

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 600 2.5 4.5 ± 100 nA 250 0.475 0.65 Ω 16 S 2290 281 46.5 16.1 120 115 12 A 1.4 V 420 nS 4.7 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. TEST CONDITIONSPARAMETER Fall Time2 nSRise Time2 IF = 8A, VGS = 0V VDD = 300V, ID = 6A, RG = 25Ω td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-On Delay Time2 Turn-Off Delay Time2 QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Drain-Source On-State Resistance1 VDS = 0V, VGS = ± 30V Gate Voltage Drain Current nC pF Input Capacitance Output Capacitance Gate-Drain Charge2 Gate-Source Charge2 Total Gate Charge2 Qgd Qgs Qg VDD = 300V, VGS = 10V, ID = 6A Ciss Coss CrssReverse Transfer Capacitance Gate-Body Leakage VDS = 600V, VGS = 0V, TC = 25 ° C VDS = 600V, VGS = 0V , TC = 100 ° C DYNAMIC VDS = VGS, ID = 250mA Drain-Source Breakdown Voltage VGS = 10V, ID = 6A VDS = 40V, ID = 6A VGS(th) RDS(ON) LIMITS UNIT gfs mA IGSS V SYMBOL STATIC IDSS IF = 12A , dlF/dt = 100A / μS, VGS = 0V Gate Threshold Voltage VGS = 0V, VDS = 25V, f = 1MHz Ver 1.0 2 2012/4/16

N-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/4/16

N-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/4/16

N-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/16