P1210BDA UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Drain-Source Voltage VDS 100 V VGSGate-Source Voltage TC = 100 ° CPower Dissipation Tj, Tstg 112 RDS(ON) 12mΩ @VGS = 10V 49A Pulsed Drain Current1 Avalanche Current IAS 15 TC = 25 ° C EAS Junction-to-Case ID TC = 25 ° C 100V Continuous Drain Current TC = 100 ° C PARAMETERS/TEST CONDITIONS Avalanche Energy2 ± 20 PD THERMAL RESISTANCE Junction & Storage Temperature Range mJ TYPICAL 62.5 W SYMBOL °C-55 to 150 MAXIMUM UNITS 150 ID IDM SYMBOL LIMITS A V Junction-to-Ambient RqJA 62.5 ° C / WRqJC L = 1mH REV 1.0 1 2018/1/11

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1.4 1.8 2.4 ± 100 nA 9.3 12 11 15 62 S 2025 186 31.6 5.2 5.5 49 A 1.2 V 55 nS 62 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Zero Gate Voltage Drain Current IGSS gfsForward Transconductance1 PARAMETER SYMBOL VGS = 0V, VDS = 50V, f = 1MHz Gate-Body Leakage Reverse Transfer Capacitance VGS = 10V , ID = 12ADrain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 10A CissInput Capacitance Qgd Output Capacitance VGS = 0V, ID = 250mAV(BR)DSS Qg(VGS=10V) VDS = 50V, ID = 12A Rise Time2 VDS = 80V, VGS = 0V VDS= 80V, VGS= 0V, TJ= 125 ° C LIMITS Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage DYNAMIC IF = 12A, VGS = 0V nSVDD = 50V, ID @ 12A, VGS = 10V, RGS = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 UNITS QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr STATIC TEST CONDITIONS VDS = 5V, ID = 12A nCQgs mA Drain-Source Breakdown Voltage VVDS = VGS, ID = 250mAVGS(th) Gate-Drain Charge2 Gate-Source Charge2 Total Gate Charge2 Qg(VGS=4.5V) mΩ IF = 12A, dlF/dt = 100A / mS VDS = 0V, VGS = ± 20V IDSS Coss Crss pF REV 1.0 2 2018/1/11

N-Channel Enhancement Mode MOSFET REV 1.0 3 2018/1/11

N-Channel Enhancement Mode MOSFET REV 1.0 4 2018/1/11

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2018/1/11

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2018/1/11

N-Channel Enhancement Mode MOSFET REV 1.0 7 2018/1/11

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2018/1/11