P1203BV

P1203BV UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed A mJ SYMBOL ID IDM 2.5 W THERMAL RESISTANCE RqJC TYPICAL UNITS ± 20 Continuous Drain Current2 VGS VDS LIMITS V TA = 25 ° C Operating Junction & Storage Temperature Range TA = 100 ° C Power Dissipation Junction-to-Ambient MAXIMUM RDS(ON) TA = 100 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage ID 12mΩ @VGS = 10V 11A Avalanche Energy L = 0.1mH Pulsed Drain Current1 , 2 TA = 25 ° C Avalanche Current 30V °C-55 to 150 IAS EAS SYMBOL PD TJ, TSTG Junction-to-Case 25 RqJA ° C / W Ver 1.0 1 2012/4/13

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1 1.8 3 ± 100 nA 70 A 14 17.5 8.5 12 40 S 846 225 126 1.65 Ω 2.7 1.9 A 1.3 V 21 nS 10 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. VGS = 0V, VDS = 0V, f = 1MHz Zero Gate Voltage Drain Current Forward Transconductance1 gfs VDS = 5V, ID = 10A DYNAMIC Input Capacitance Ciss mAIDSS VDS = 20V, VGS = 0V , TJ = 125 ° C VGS = 0V, VDS = 20V, f = 1MHz pF mΩ Output Capacitance Coss VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V STATIC Gate-Body Leakage Gate Threshold Voltage IGSS VGS = 0V, ID = 250mAV(BR)DSS VDS = 24V, VGS = 0V TEST CONDITIONS V LIMITS UNIT Drain-Source Breakdown Voltage VGS(th) Reverse Transfer Capacitance Crss Total Gate Charge2 Qg PARAMETER SYMBOL Gate Resistance Rg On-State Drain Current1 ID(ON) VDS = 0.5V(BR)DSS, ID = 8.8A, VGS = 10V nCGate-Source Charge2 Qgs Gate-Drain Charge2 Qgd VDD = 15V, ID = 12.5A, VGS = 10V, RG=6Ω nSRise Time2 tr Turn-Off Delay Time2 td(off) Fall Time2 tf Reverse Recovery Time trr IF = 11 A, dlF/dt = 100A / mS Reverse Recovery Charge Qrr SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS VDS = 10V, VGS = 10V Drain-Source On-State Resistance1 VGS = 10V, ID = 11ARDS(ON) VGS = 4.5V, ID = 11A Forward Voltage1 VSD IF = 25A, VGS = 0V Turn-On Delay Time2 td(on) Ver 1.0 2 2012/4/13

N-Channel Enhancement Mode MOSFET Ver 1.0 3 2012/4/13

N-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/4/13

N-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/13